Coupling between magnetic order and charge transport in a two-dimensional magnetic semiconductor

Telford, Evan J.; Dismukes, Avalon H.; Dudley, Raymond L.; Wiscons, Ren A.; Lee, Kihong; Chica, Daniel G.; Ziebel, Michael E.; Han, Myung‐Geun; Yu, Jessica X.; Shabani, Sara; Scheie, Allen; Watanabe, Kenji; Taniguchi, Takashi; Xiao, Di; Zhu, Yimei; Pasupathy, Abhay; Nuckolls, Colin; Zhu, Xiaoyang; Dean, Cory; Roy, Xavier

doi:10.1038/s41563-022-01245-x

Cited by 102 publications

(167 citation statements)

References 46 publications

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“…S15) is consistent with the MRR results, determining TN ~ 135 K of CrSBr flake (N = 4). Figure 2h shows the temperature-dependent Hs extracted from the black dashed lines in Such a peculiar feature was observed in similar CrSBr works 15,30 and it is ascribed to the magnetic defects. 30 Figure 2.…”

Section: Resultsmentioning

confidence: 54%

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Layer-Dependent Interlayer Antiferromagnetic Spin Reorientation in Air-Stable Semiconductor CrSBr

Wang

Liu

et al. 2022

ACS Nano

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Magnetic van der Waals (vdW) materials possess versatile spin configurations stabilized in reduced dimensions. One magnetic order is the interlayer antiferromagnetism in A-type vdW antiferromagnet, which may be effectively modified by the magnetic field, stacking order and thickness scaling. However, atomically revealing the interlayer spin orientation in the vdW antiferromagnet is highly challenging, because most of the material candidates exhibit an insulating ground state or instability in ambient conditions. Here, we report the layer-dependent interlayer antiferromagnetic spin reorientation in air-stable semiconductor CrSBr using magnetotransport characterization and firstprinciples calculations. We reveal an odd-even layer effect of interlayer spin reorientation, which originates from the competitions among interlayer exchange, magnetic anisotropy energy and extra Zeeman energy of uncompensated magnetization. Furthermore, we quantitatively constructed the layer-dependent magnetic phase diagram with the help of a linear-chain model.Our work uncovers the layer-dependent interlayer antiferromagnetic spin reorientation engineered by magnetic field in the air-stable semiconductor.

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Section: Resultsmentioning

confidence: 54%

“…Figure 2h shows the temperature-dependent Hs extracted from the black dashed lines in Such a peculiar feature was observed in similar CrSBr works 15,30 and it is ascribed to the magnetic defects. 30 Figure 2. Temperature-dependent magnetotransport measurements of tetralayer CrSBr.…”

Section: Resultsmentioning

confidence: 54%

Layer-Dependent Interlayer Antiferromagnetic Spin Reorientation in Air-Stable Semiconductor CrSBr

Wang

Liu

et al. 2022

ACS Nano

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“…A variety of analytical tools have been used to characterize CrSBr, including magnetometry, [ 32,33 ] magneto‐transport, [ 32,33 ] Raman spectroscopy, [ 32–34 ] photoluminescence (PL), [ 33–35 ] calorimetry, [ 34 ] and second‐harmonic generation (SHG). [ 34 ] Using these approaches, it has been suggested that intralayer FM correlations associated with spins on Cr orbitals give rise to short‐range b ‐axis polarized FM domains in each layer below a critical temperature of T c ≈ 160 K (i.e., well above T N ).…”

Section: Introductionmentioning

confidence: 99%

Visualizing Atomically Layered Magnetism in CrSBr

et al. 2022

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ability to synthesize and characterize 2D materials with long-range magnetic order was notably absent. Such materials hold great promise for potential applications in spintronics, [6][7][8][9][10][11] topological superconductivity, [12,13] vdW heterostructures, [14,15] and memory storage. [16,17] Hypothetical 2D magnets defy the Mermin-Wagner theorem, [18] which states that long-range magnetic order cannot exist at finite temperature within the 2D isotropic Heisenberg model. [19] Hence, magnetic anisotropy is a necessary prerequisite to realizing stable 2D magnetism, and has been demonstrated to exist in several layered materials over the last few years. [3,4,[20][21][22][23][24][25][26] Among these, the chromium trihalides CrX 3 (X = Cl, Br, I) have been the most extensively studied, all of which display intralayer ferromagnetic (FM) order and either FM or antiferromagnetic (AFM) interlayer coupling depending on the choice of halide and crystal thickness. [27] Despite their extensive characterization, chromium trihalides suffer from a lack of air and moisture stability and possess relatively low transition temperatures, limiting their applications. On the other hand, CrSBr has emerged [28][29][30][31] as an air-stable layered magnetic material possessing A-type AFM ordering with a comparatively high Néel temperature (T N ≈ 132 K).A variety of analytical tools have been used to characterize CrSBr, including magnetometry, [32,33] magneto-transport, [32,33] 2D materials can host long-range magnetic order in the presence of underlying magnetic anisotropy. The ability to realize the full potential of 2D magnets necessitates systematic investigation of the role of individual atomic layers and nanoscale inhomogeneity (i.e., strain) on the emergence of stable magnetic phases. Here, spatially dependent magnetism in few-layer CrSBr is revealed using magnetic force microscopy (MFM) and Monte Carlo-based simulations. Nanoscale visualization of the magnetic sheet susceptibility is extracted from MFM data and force-distance curves, revealing a characteristic onset of both intra-and interlayer magnetic correlations as a function of temperature and layer-thickness. These results demonstrate that the presence of a single uncompensated layer in odd-layer terraces significantly reduces the stability of the low-temperature antiferromagnetic (AFM) phase and gives rise to multiple coexisting magnetic ground states at temperatures close to the bulk Néel temperature (T N ). Furthermore, the AFM phase can be reliably suppressed using modest fields (≈16 mT) from the MFM probe, behaving as a nanoscale magnetic switch. This prototypical study of few-layer CrSBr demonstrates the critical role of layer parity on field-tunable 2D magnetism and validates MFM for use in nanomagnetometry of 2D materials (despite the ubiquitous absence of bulk zero-field magnetism in magnetized sheets).The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adma.202201000.

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“…CrSBr combines several particularly interesting properties. [23][24][25][26][27][28][29][30][31][32][33] It is a semiconductor with an energy gap of ∼ 1.5 eV. [25,27] It is also an Atype antiferromagnet (AFM) with the magnetic easyaxis along the b-direction and a high Néel temperature of T N ∼ 132 K. [24,27] A number of recent works have shown structural phase transformations, [31] magnetooptical [29] and magneto-transport [27,32,33] properties and exciton-magnon coupling.…”

mentioning

confidence: 99%

“…[23][24][25][26][27][28][29][30][31][32][33] It is a semiconductor with an energy gap of ∼ 1.5 eV. [25,27] It is also an Atype antiferromagnet (AFM) with the magnetic easyaxis along the b-direction and a high Néel temperature of T N ∼ 132 K. [24,27] A number of recent works have shown structural phase transformations, [31] magnetooptical [29] and magneto-transport [27,32,33] properties and exciton-magnon coupling. [34] Understanding the underlying electronic structure, the quasi-particles and their mutual couplings is key to engineering magnetic properties in CrSBr.…”

mentioning

confidence: 99%