Coupling model of electromigration and experimental verification – Part I: Effect of atomic concentration gradient

Cui, Zhenduo; Fan, Xuejun; Zhang, Yaqian; Vollebregt, Sten; Fan, Jiajie; Zhang, Guoqi

doi:10.1016/j.jmps.2023.105257

Cited by 9 publications

(5 citation statements)

References 81 publications

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“…The FE model was constructed based on the SWEAT structure used in experiments in refer. [6,10]. As shown in Fig.…”

Section: Finite Element Modelmentioning

confidence: 84%

“…According to the testing conditions for EM in refer. [6,10], following boundary conditions are applied:…”

Section: Finite Element Modelmentioning

confidence: 99%

“…Electromigration (EM) in interconnects has become a major reliability issue in recent years because of the miniaturization trend to meet the demand of higher performance of microelectronic devices. EM essentially is an enhanced mass transport process driven by high current density [1][2][3][4][5][6][7][8]. The electron wind force, attributed to the momentum exchange between conducting electrons and metal atoms, pushes atoms diffusing from cathode to anode.…”

Section: Introductionmentioning

confidence: 99%

“…In accelerated EM tests, one of the typical structures to explore the effect of temperature and temperature gradient on EM is either the standard wafer-level EM acceleration test (SWEAT) or SWEAT-like structure [6,10,[12][13][14]. In this structure, narrow metal line at two ends is connected to large-area pads, allowing atom fluxes between metal line and pads.…”

Section: Introductionmentioning

confidence: 99%

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Effect of Thermomigration on Electromigration in SWEAT Structures

Cui

Fan

Zhang

2023

2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and

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This paper investigates thermomigration (TM) and electromigration (EM) in SWEAT structure. Firstly, the distribution of temperature along SWEAT structure during EM is obtained by using finite element (FE) simulation. The FE simulation results show that the temperature is almost uniformly distributed in the most region of narrow line in SWEAT structure, but temperature decreases rapidly at both sides of conductor. Accordingly, the temperature gradient in the narrow line of SWEAT structures is calculated. Then, we apply the obtained temperature and temperature gradient in the governing equation of EM in terms of atomic concentration. The numerical results show that the TM caused by temperature gradient causes the material depletion near both ends of conductor. At the same time, atoms diffuse from the middle region of conductor to both sides driven by the atomic concentration, causing the voids in middle of conductor.

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“…The FE model was constructed based on the SWEAT structure used in experiments in refer. [6,10]. As shown in Fig.…”

Section: Finite Element Modelmentioning

confidence: 84%

“…According to the testing conditions for EM in refer. [6,10], following boundary conditions are applied:…”

Section: Finite Element Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effect of Thermomigration on Electromigration in SWEAT Structures

Cui

Fan

Zhang

2023

2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and

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“…Compared to other packaging technologies, FOWLP has a smaller package size and, therefore, is in a denser arrangement of micro-bumps. In the high-density interconnections of FOWLP, the electromigration failure phenomenon is highlighted due to the interaction of heat and electricity [ 17 , 18 , 19 , 20 , 21 ]. At present, the analysis of EM failure mechanisms for micro-bump structures is mostly based on experimental phenomena.…”

Section: Introductionmentioning

confidence: 99%

Three-Dimensional Integrated Fan-Out Wafer-Level Package Micro-Bump Electromigration Study

Tian

Gu²,

et al. 2023

Micromachines

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To meet the demands for miniaturization and multi-functional and high-performance electronics applications, the semiconductor industry has shifted its packaging approach to multi-chip vertical stacking. Among the advanced packaging technologies for high-density interconnects, the most persistent factor affecting their reliability is the electromigration (EM) problem on the micro-bump. The operating temperature and the operating current density are the main factors affecting the EM phenomenon. Therefore, when a micro-bump structure is in the electrothermal environment, the EM failure mechanism of the high-density integrated packaging structure must be studied. To investigate the relationship between loading conditions and EM failure time in micro-bump structures, this study established an equivalent model of the vertical stacking structure of fan-out wafer-level packages. Then, the electrothermal interaction theory was used to carry out numerical simulations in an electrothermal environment. Finally, the MTTF equation was invoked, with Sn63Pb37 as the bump material, and the relationship between the operating environment and EM lifetime was investigated. The results showed that the current aggregation was the location where the bump structure was most susceptible to EM failure. The accelerating effect of the temperature on the EM failure time was more obvious at a current density of 3.5 A/cm2, which was 27.51% shorter than 4.5 A/cm2 at the same temperature difference. When the current density exceeded 4.5 A/cm2, the change in the failure time was not obvious, and the maximum critical value of the micro-bump failure was 4 A/cm2~4.5 A/cm2.

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