Coupling of equipment simulation and feature-scale profile simulation for dry-etching of polysilicon gate lines

Baer, Eberhard; Kunder, D.; Evanschitzky, Peter; Lorenz, J.

doi:10.1109/sispad.2010.5604571

Cited by 6 publications

(5 citation statements)

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“…To this end, the interaction of the different species with the substrate is considered and local values of the different fluxes are extracted which allow one to determine local etching or deposition rates. Examples for this approach are given in [27] for deposition and in [28] for etching. The discussion of the large variety of deposition and etching processes is beyond the scope of this paper.…”

Section: Resultsmentioning

confidence: 99%

“…The etching simulations have been carried out with ANETCH using coupling to equipment simulation thus allowing one to study the effect of the feature position on the wafer. Details are provided elsewhere [28]. Briefly, an inductively-coupled plasma reactor is simulated, which is operated at a pressure of 1.5 Pa and powered with 1500 W, and the substrate is biased with 200 V. Cross sections of the etched gate electrode for two different positions on the wafer are shown in Figure 12b,c respectively.…”

Section: Resultsmentioning

confidence: 99%

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Process Variability—Technological Challenge and Design Issue for Nanoscale Devices

et al. 2018

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Current advanced transistor architectures, such as FinFETs and (stacked) nanowires and nanosheets, employ truly three-dimensional architectures. Already for aggressively scaled bulk transistors, both statistical and systematic process variations have critically influenced device and circuit performance. Three-dimensional device architectures make the control and optimization of the device geometries even more important, both in view of the nominal electrical performance to be achieved and its variations. In turn, it is essential to accurately simulate the device geometry and its impact on the device properties, including the effect caused by non-idealized processes which are subject to various kinds of systematic variations induced by process equipment. In this paper, the hierarchical simulation system developed in the SUPERAID7 project to study the impact of variations from equipment to circuit level is presented. The software system consists of a combination of existing commercial and newly developed tools. As the paper focuses on technological challenges, especially issues resulting from the structuring processes needed to generate the three-dimensional device architectures are discussed. The feasibility of a full simulation of the impact of relevant systematic and stochastic variations on advanced devices and circuits is demonstrated.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Process Variability—Technological Challenge and Design Issue for Nanoscale Devices

et al. 2018

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“…In micromachining processes it is very useful to predict the resulting structure of an experiment under specific conditions so higher accuracy can be achieved and costs can be reduced. Correspondingly, several simulators of different processes have been developed in recent years, such as: wet etching process [2][3][4][5][6][7][8], focused ion beam (FIB) [9], plasma etching [10,11] and physical sputtering [12].…”

Section: Introductionmentioning

confidence: 99%

Improvement of feature-scale profile evolution in a silicon dioxide plasma etching simulator using the level set method

Montoliu

Baer

Cerdá

et al. 2015

J. Micromech. Microeng.

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We present a three-dimensional simulator of silicon dioxide etching in a fluorocarbon plasma process. Explicit parametrization of the surface is currently one of the most frequently used methods to evolve the etched surface according to the equipment simulation results. These techniques update the coordinates of the vertices and need to add and/or remove faces to keep an accurate surface representation. These processes can introduce errors and produce unrealistic results, especially in complex structures. In this paper we prove the effectiveness of our level set (LS) implementation to evolve the etched surface according to etching models, resulting in a fully operational plasma etching simulator. The LS implementation is based on a surface reconstruction algorithm from scattered points enabling the simulation of complex topological changes such as coalescing or splitting of contiguous regions. Additionally, our algorithm is based on the sparse field method for reducing computational time of the surface evolution process and it is perfectly suited to be used with the Anetch software package. Finally, several structures are simulated and an experimental result is used to compare and validate the effectiveness of the simulator we have developed.

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“…This data can be provided by equipment simulations or by information obtained directly from experiments [245][246][247]. This reactor-scale data is then used as a data base by the feature-scale simulator.…”

Section: Simulation Of Reactive Ion Etchingmentioning

confidence: 99%

“…In micromachining processes, it is very useful to predict the resulting structure of an experiment under specific conditions so higher accuracy can be achieved and costs can be reduced. Correspondingly, several models of plasma etching have been developed in the last years [247,258,[297][298][299].…”

Section: Introductionmentioning

confidence: 99%

Study, Modelling and Implementation of the Level Set Method Used in Micromachining Processes

Álvaro¹

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"Sí com lo taur se'n va fuyt pel desert quantés sobrat per son semblant qui·l força, ne torna may fins ha cobrada força per destruir aquell qui l'ha desert: tot enaxí·m cové lunyar de vós, car vostre gest mon esforç ha confús: no tornaré fins del tot haja fus la gran pahor qui·m toll ser delitós." Ausiàs March, 1397 - †1459 Per a Marc AgradecimientosSin duda, todo el trabajo que hay detrás de esta tesis ha sido posible gracias a la colaboración y dedicación de muchos. Todos ellos merecen ser agradecidos por haber contribuido a su manera en la culminación de este trabajo.Agradecer sinceramente a mis directores y tutores, Ximo Cerdà y Ricardo Colom, por permitir formarme como investigador y ofrecerme sus consejos. Ellos me han tratado con respeto y nunca han puesto freno a mis ambiciones, más bien las han engrandecido. Gracias por guiar toda esta aventura.Una mención muy especial se merecen MiguelÁngel Gosálvez y Néstor Ferrando. Les tengo que agradecer la gran suerte que he tenido de poder colaborar con dos eminencias como ellos. Sus grandes conocimientos han permitido obtener los mejores resultados de este trabajo, además de haber sido una experiencia gratificante. Gracias por su constante apoyo y su ayuda infinita.Asimismo, dar las gracias también a Vicente Herrero, Jose María Monzó, Ana Ros y Ramón J. Aliaga. Ellos dieron vida a un ambiente de trabajo idóneo, aportándome mucho más que ayuda y conocimientos. Del mismo modoÁngel Tébar, Rafael Gadea y Jorge Daniel siempre han estado dispuestos a ayudar en todo cuanto han podido.Mi estancia en el instituto Fraunhofer de Erlangen me ha permitido acelerar mi formación y vivir unas experiencias de lo más satisfactorias. Todo ello ha sido gracias a la magnífica gente con la que he tenido el placer de colaborar y convivir. Gracias a Eberhard Bär y a toda la incontable gente del Fraunhofer IISB.Un mérito especial se merecen mi familia y mis amigos por aguantarme todo este tiempo sin perder la paciencia conmigo ni en los peores momentos. Es de un valor incalculable tener tantos hombros en los que poder dejarte caer para coger las fuerzas suficientes para seguir. Gracias Isidor y Lourdes, gracias Ferran y Andreu, y gracias Vicente, Enric y David.iii No podía faltar mi particular aimia, Nuria.Ella se merece un eterno agradecimiento por haber tenido que vivir todo esto conmigo. Compañera de todas y cada una de las experiencias, buenas y malas, de esta larga aventura. Animándome en todo momento, siempre ayudándome con un altruismo deslumbrante y enseñándome una inmensidad de conocimientos. Ella, ha sido y es, mi llir entre cards.Una vez más, muchísimas gracias a todos. iv SummaryThe main topic of the present thesis is the improvement of fabrication processes simulation by means of the Level Set (LS) method. The LS is a mathematical approach used for evolving fronts according to a motion defined by certain laws. The main advantage of this method is that the front is embedded inside a higher dimensional function such that updating this function instead of directly the front it...

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Coupling of equipment simulation and feature-scale profile simulation for dry-etching of polysilicon gate lines

Cited by 6 publications

References 6 publications

Process Variability—Technological Challenge and Design Issue for Nanoscale Devices

Process Variability—Technological Challenge and Design Issue for Nanoscale Devices

Improvement of feature-scale profile evolution in a silicon dioxide plasma etching simulator using the level set method

Study, Modelling and Implementation of the Level Set Method Used in Micromachining Processes

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