Coupling of Er light emissions to plasmon modes on In2O3: Sn nanoparticle sheets in the near-infrared range

Matsui, Hiroaki; Badalawa, Wasanthamala; Hasebe, Takayuki; Furuta, Sadaaki; Nomura, Wataru; Yatsui, Takashi; Ohtsu, Motoichi; Tabata, Hitoshi

doi:10.1063/1.4892004

Cited by 22 publications

(22 citation statements)

References 33 publications

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“…We observed a drastic change in the surface morphology of the metal, and confirmed the increase in the photocurrent at the wavelength that is close to that used during the electrode deposition. Since Au has high absorption coefficient, alternative materials, such as transparent conducting oxides were considered to achieve the resonance at longer wavelengths 39,40 .…”

Section: Plasmonic Effectmentioning

confidence: 99%

Recent improvement of silicon absorption in opto-electric devices

Yatsui¹

2019

Opto-Electronic Advances

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Silicon dominates the contemporary electronic industry. However, being an indirect band-gap material, it is a poor absorber of light, which decreases the efficiency of Si-based photodetectors and photovoltaic devices. This review highlights recent studies performed towards improving the optical absorption of Si. A summary of recent theoretical approaches based on the first principle calculation has been provided. It is followed by an overview of recent experimental approaches including scattering, plasmon, hot electron, and near-field effects. The article concludes with a perspective on the future research direction of Si-based photodetectors and photovoltaic devices.

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Section: Plasmonic Effectmentioning

confidence: 99%

Recent improvement of silicon absorption in opto-electric devices

Yatsui¹

2019

Opto-Electronic Advances

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“…The careful choice of impurity dopants can show clear LSPR peaks in the near-IR range. The assembled films of In 2 O 3 :Sn NPs have shown optical enhancements of near-IR luminescence and absorption [21,22]. These behaviours make use of the electric-fields (E-fields) excited on the NP film surfaces [23].…”

Section: Spr Excitations On Toss Have Been Reported On Different Strumentioning

confidence: 99%

“…However, crystalline sizes derived from Scherer's equation from the (222) diffraction peak of XRD patterns were calculated as 1.58 and 2.20 nm for un-doped and doped NPs, respectively. Broadenings of the line-widths of the XRD patterns are attributed to structural imperfections such as defects and strains [22].…”

Section: Structural Properties Of Ito Npsmentioning

confidence: 99%

Infrared Solar Thermal-Shielding Applications Based on Oxide Semiconductor Plasmonics

Matsui¹,

Tabata²

2017

Nanoplasmonics - Fundamentals and Applications

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This chapter describes plasmonic responses in In 2 O 3 :Sn nanoparticles (ITO NPs) and their assembled ITO NP sheets in the infrared (IR) range. ITO NPs clearly provide resonance peaks related to local surface plasmon resonances (LSPRs) in the near-IR range, which are dependent on electron density in the NPs. In particular, electron-impurity scattering plays an important role in determining carrier-dependent plasmon damping, which is needed for the design of plasmonic materials based on ITO. ITO NPs are mainly dominated by light absorption. However, a high light reflection is observed in the nearand mid-IR range when using assembled NP sheets. This phenomenon is due to the fact that the introduction of surface modifications to the NPs can facilitate the production of electric-field (E-field) coupling between the NPs. The three-dimensional (3D) E-field coupling allows for resonant splitting of plasmon excitations to the quadrupole and dipole modes, thereby obtaining selective high reflections in the IR range. The high reflective performances from the assembled NP sheets were attributed to the plasmon interactions at the internanoparticle gaps. This work provides important insights for harnessing IR optical responses based on plasmonic technology toward the fabrications of IR solar thermal-shielding applications.

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“…This LSPR effect further provides strong electric fields (E-fields) on NP surfaces, which contribute to surface-enhanced optical spectroscopy [9]. For example, assembled films consisting of ITO NPs have demonstrated optical enhancements of near-IR luminescence and absorption in the IR range [10,11]. Therefore, optical studies concerning oxide semiconductor NPs can break new research ground in the area of plasmonics and metamaterials.…”

Section: Introductionmentioning

confidence: 99%

Surface Plasmons in Oxide Semiconductor Nanoparticles: Effect of Size and Carrier Density

Matsui¹

2020

Nanocrystalline Materials

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Oxide semiconductors have received much attention for potential use in optoelectronic applications such as transparent electrodes, transistors, and emitting devices. Recently, new functionalities of oxide semiconductors have been discovered such as localized surface plasmon resonances (LSPRs), which show highefficiency plasmon excitations in the infrared (IR) range using different structures such as nanorods, nanoparticles (NPs), and nanodots. In this chapter, we introduce optical properties of carrier-and size-dependent LSPRs in oxide semiconductor NPs based on In 2 O 3 : Sn (ITO). In particular, systematic examinations of carrier-and size-dependent LSPRs reveal the damping mechanisms on LSPR excitations of ITO NPs, which play an important role in determining excitation efficiency of LSPRs. Additionally, the control of carrier and size in the ITO NPs contribute toward improving solar-thermal shielding in the IR range. The high IR reflectance of assembled films of ITO NPs is due to three-dimensional plasmon coupling between the NPs, which is related to electron carriers and particle size of ITO NPs. This chapter provides new information concerning structural design when fabricating thermal-shielding materials based on LSPRs in oxide semiconductor NPs.

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Coupling of Er light emissions to plasmon modes on In2O3: Sn nanoparticle sheets in the near-infrared range

Cited by 22 publications

References 33 publications

Recent improvement of silicon absorption in opto-electric devices

Recent improvement of silicon absorption in opto-electric devices

Infrared Solar Thermal-Shielding Applications Based on Oxide Semiconductor Plasmonics

Surface Plasmons in Oxide Semiconductor Nanoparticles: Effect of Size and Carrier Density

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