Coupling Secondary Ion Mass Spectrometry and Atom Probe Tomography for Atomic Diffusion and Segregation Measurements

Portavoce, A.; Hoummada, K.; Chow, Lee

doi:10.1017/s1431927618015623

Cited by 3 publications

(2 citation statements)

References 39 publications

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“…SIMS is generally dedicated to the measurement of impurities whose concentrations are lower than 1 at. % [121]. This limitation is due to matrix effects, related to the variation of the ionization yield of the elements versus the sample bulk concentration.…”

Section: Depth Correctionmentioning

confidence: 99%

Techniques of Tracer Diffusion Measurements in Metals, Alloys and Compounds

Gärtner

Belkacemi

Esin

et al. 2021

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Tracer diffusion is one of most reliable techniques for providing basic kinetic data in solids. In the present review, selected direct methods, in particular the radiotracer measurements as a superior technique due to its high sensitivity, Secondary-Ion-Mass-Spectroscopy (SIMS) profiling, X-Ray Diffraction measurements and Rutherford Backscattering Spectrometry are presented and discussed. Special attention is put on the radiotracer technique describing the currently used sectioning techniques in detail with a focus on the experimental applications and complications. The relevant experimental results are exemplary shown. Furthermore, the most recent developments and advances related to the combined tracer/inter-diffusion measurements are highlighted. It is shown that this approach offers possibilities to provide the concentration-dependent tracer diffusion coefficients of the constituting elements in multi-component alloys in high-throughput experiments. Possibilities of estimating the tracer diffusion coefficients following different types of diffusion couple methods in binary and multicomponent systems are briefly introduced. Finally, specificity of SIMS analysis of diffusion in fine-grained materials are carefully analyzed. If applicable, a direct comparison of the results obtained by different techniques is given.

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Section: Depth Correctionmentioning

confidence: 99%

Techniques of Tracer Diffusion Measurements in Metals, Alloys and Compounds

Gärtner

Belkacemi

Esin

et al. 2021

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“…With the enhancement of device integration and the reduction in feature size to < 3 nm, there is an urgent need for a doping profiling technique with high resolution and high sensitivity. 3,4 Currently, capacitancevoltage profiling, 5,6 secondary ion mass spectrometry, 7,8 spreading resistance profiling, 9,10 scanning tunnelling microscopy 11 and electron holography 12 are often used for doping profiling. However, these techniques are more or less suffer from low spatial resolution, low accuracy, poor limit of detection, low throughput, time consuming, or high cost.…”

Section: Introductionmentioning

confidence: 99%

Optimized dopant imaging for GaN by a scanning electron microscopy

Ban

Yuan

Huang

2023

Journal of Microscopy

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Two-dimensional dopant profiling is vital for the modelling, design, diagnosis and performance improvement of semiconductor devices and related research and development. Scanning electron microscopy (SEM) has shown great potential for dopant profiling. In this study, the effects of secondary electron (SE) detectors and imaging parameters on the contrast imaging of multilayered p-n and p-i junction GaN specimens via SEM were studied to enable dopant profiling. The doping contrast of the image captured by the in-lens detector was superior to that of the image captured by the side-attached Everhart-Thornley detector at lower acceleration voltages (V acc ) and small working distances (WD). Furthermore, the doping contrast levels of the in-lens detector-obtained image under different combinations of V acc and WD were studied, and the underlying mechanism was explored according to local external fields and the refraction effect. The difference in the angular distributions of SEs emitted from different regions, the response of the three types of SEs to detectors, and the solid angles of detectors toward the specimen surface considerably influenced the results. This systematic study will enable the full exploitation of SEM for accurate dopant profiling, improve the analysis of the doping contrast mechanism, and further improve doping contrast for semiconductors.

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Scanning electron microscopy imaging of multilayer-doped GaN: Effects of surface band bending, surface roughness, and contamination layers on doping contrast

Wang,

Zhang,

Zhai

et al. 2024

Journal of Vacuum Science &Amp; Technology A

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Dopant profiling by a scanning electron microscope possesses great potential in the semiconductor industry due to its rapid, contactless, non-destructive, low cost, high spatial resolution, and high accuracy characteristics. Here, the influence of plasma and wet chemical treatments on doping contrast was investigated for a multilayered p-n GaN specimen, which is one of the most promising third-generation wide bandgap semiconductors. Angle-resolved x-ray photoelectron spectroscopy and atomic force microscope were employed to characterize the degree of surface band bending, surface roughness, gallium oxides, and hydrocarbons on the surface of GaN. N2 and air plasmas were unable to remove the surface contamination layers, although the degree of surface band bending was suppressed. In contrast, wet chemical methods offer superior capability in removing contamination layers; however, the surface roughness was increased to varying degrees. Notably, NH4F solution is capable of improving the doping contrast. The underlying mechanism was elucidated from the perspective of surface band bending, surface roughness, and contamination. The findings reported here will provide a feasible solution for effective characterization of semiconductor materials and devices.

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Coupling Secondary Ion Mass Spectrometry and Atom Probe Tomography for Atomic Diffusion and Segregation Measurements

Cited by 3 publications

References 39 publications

Techniques of Tracer Diffusion Measurements in Metals, Alloys and Compounds

Techniques of Tracer Diffusion Measurements in Metals, Alloys and Compounds

Optimized dopant imaging for GaN by a scanning electron microscopy

Scanning electron microscopy imaging of multilayer-doped GaN: Effects of surface band bending, surface roughness, and contamination layers on doping contrast

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