Covalently formation of insulation and barrier layers in high aspect ratio TSVs

Hu, Yue; Xiong, Lishuang; Li, Ming

doi:10.1016/j.apsusc.2021.151588

Cited by 10 publications

(7 citation statements)

References 18 publications

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“…Any aminated surface can be easily functionalized with palladium cations by soaking it in an acidic PdCl 2 /HCl complexes system. ,,, Indeed, in strongly acidic solutions (0.5 mol/L in our case), most palladium cations exist under anionic complexes ([PdCl 4 ] 2– , and [PdCl 3 (H 2 O)] 1– ), while the aminated surface becomes positively charged due to the protonation reaction of the amine-terminated groups in an acidic medium. ,− Consequently, anionic palladium complexes are electrostatically trapped on the positively protonated surface. This activation approach not only facilitates functionalization but also minimizes the weight of the noble metal palladium, which is attached to the surface only via the amine groups.…”

Section: Resultsmentioning

confidence: 93%

Autocatalytic Deposition of Nickel–Boron Diffusion Barrier onto Diazonium-Treated SiO₂ for High Aspect Ratio Through-Silicon Via Technology in 3D Integration

Zeb,

Nguyen,

Giang

et al. 2024

ACS Appl. Electron. Mater.

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In the field of three-dimensional (3D) integration for microelectronics, achieving efficient and reliable deposition of multilayers within a high aspect ratio through-silicon vias (TSVs) is of paramount importance. Conventional physical-based techniques face several challenges in high aspect ratio TSV fabrication, from electrical isolation to copper electro-filling. In this study, we propose an innovative approach using an autocatalytic deposition process to address these challenges. Unlike multistep silane chemistry, our electroless nickel plating is accomplished on diazonium-treated SiO 2 surfaces. Remarkably, the deposited nickel−boron film exhibits excellent step-coverage in high-aspect-ratio TSVs. The robust adhesion of the electrolessly deposited film, combined with its chemical composition, makes it suitable as a diffusion barrier and seed layer for direct electroplating of copper. Consequently, we demonstrate the feasibility of our Cu/Ni−B/SiO 2 stack for efficient copper filling of high aspect ratio TSVs, despite the challenging presence of overhang formations at the via tops.

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Section: Resultsmentioning

confidence: 93%

Autocatalytic Deposition of Nickel–Boron Diffusion Barrier onto Diazonium-Treated SiO₂ for High Aspect Ratio Through-Silicon Via Technology in 3D Integration

Zeb,

Nguyen,

Giang

et al. 2024

ACS Appl. Electron. Mater.

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“…This issue is intensified for high-aspect-ratio or ultra-deep TSVs due to the low solute concentrations at their bottom ends. Hu et al 44 reported enhanced adsorption of Pd catalysts on polymer liners treated in sodium borohydride (NaBH 4 ) solution and achieved a high aspect ratio of 10, with a TSV depth that remained in the tens of microns. Considering that ELP is a wet process that relies on a series of interfacial chemical reactions in a specific order and weakens at the TSV bottoms due to the inadequate diffusion and transport capabilities of reactant solutes, the process difficulty dramatically increases for ultra-deep TSVs.…”

Section: Introductionmentioning

confidence: 99%

An ultra-deep TSV technique enabled by the dual catalysis-based electroless plating of combined barrier and seed layers

Su,

Ding,

Xiao

et al. 2024

Microsyst Nanoeng

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Silicon interposers embedded with ultra-deep through-silicon vias (TSVs) are in great demand for the heterogeneous integration and packaging of opto-electronic chiplets and microelectromechanical systems (MEMS) devices. Considering the cost-effective and reliable manufacturing of ultra-deep TSVs, the formation of continuous barrier and seed layers remains a crucial challenge to solve. Herein, we present a novel dual catalysis-based electroless plating (ELP) technique by tailoring polyimide (PI) liner surfaces to fabricate dense combined Ni barrier/seed layers in ultra-deep TSVs. In additional to the conventional acid catalysis procedure, a prior catalytic step in an alkaline environment is proposed to hydrolyze the PI surface into a polyamide acid (PAA) interfacial layer, resulting in additional catalysts and the formation of a dense Ni layer that can function as both a barrier layer and a seed layer, particularly at the bottom of the deep TSV. TSVs with depths larger than 500 μm and no voids are successfully fabricated in this study. The fabrication process involves low costs and temperatures. For a fabricated 530-μm-deep TSV with a diameter of 70 μm, the measured depletion capacitance and leakage current are approximately 1.3 pF and 1.7 pA at 20 V, respectively, indicating good electrical properties. The proposed fabrication strategy can provide a cost-effective and feasible solution to the challenge of manufacturing ultra-deep TSVs for modern 3D heterogeneous integration and packaging applications.

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“…The CVD method of vapor deposition is well suited to eliminate high AR inhomogeneity in the thickness of barrier and seed layers [ 20 , 21 ], but the application of this method is very costly. Excellent results in terms of simplicity and low cost have been shown by chemical Ni deposition as barrier and seed layer in TSV with high AR [ 19 , 22 , 23 , 24 , 25 ].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of Thin Metal Films Deposited by Electroless Plating with Organic Additives for Electrical Circuits Applications

Buylov,

Sotskaya,

Kozaderov

et al. 2023

Micromachines

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In our work, we studied thin nickel films deposited by electroless plating for use as a barrier and seed layer in the through-silicon vias (TSV) technology. El-Ni coatings were deposited on a copper substrate from the original electrolyte and with the use of various concentrations of organic additives in the composition of the electrolyte. The surface morphology, crystal state, and phase composition of the deposited coatings were studied by SEM, AFM, and XRD methods. The El-Ni coating deposited without the use of an organic additive has an irregular topography with rare phenocrysts of globular formations of hemispherical shape and a root mean square roughness value of 13.62 nm. The phosphorus concentration in the coating is 9.78 wt.%. According to the results of the X-ray diffraction studies of El-Ni, the coating deposited without the use of an organic additive has a nanocrystalline structure with an average nickel crystallite size of 2.76 nm. The influence of the organic additive is seen in the smoothening of the samples surface. The root mean square roughness values of the El-Ni sample coatings vary within 2.09–2.70 nm. According to microanalysis data the phosphorus concentration in the developed coatings is ~4.7–6.2 wt.%. The study of the crystalline state of the deposited coatings by X-ray diffraction made it possible to detect two arrays of nanocrystallites in their structure, with average sizes of 4.8–10.3 nm and 1.3–2.6 nm.

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Covalently formation of insulation and barrier layers in high aspect ratio TSVs

Cited by 10 publications

References 18 publications

Autocatalytic Deposition of Nickel–Boron Diffusion Barrier onto Diazonium-Treated SiO₂ for High Aspect Ratio Through-Silicon Via Technology in 3D Integration

Autocatalytic Deposition of Nickel–Boron Diffusion Barrier onto Diazonium-Treated SiO₂ for High Aspect Ratio Through-Silicon Via Technology in 3D Integration

An ultra-deep TSV technique enabled by the dual catalysis-based electroless plating of combined barrier and seed layers

Fabrication and Characterization of Thin Metal Films Deposited by Electroless Plating with Organic Additives for Electrical Circuits Applications

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Covalently formation of insulation and barrier layers in high aspect ratio TSVs

Cited by 10 publications

References 18 publications

Autocatalytic Deposition of Nickel–Boron Diffusion Barrier onto Diazonium-Treated SiO2 for High Aspect Ratio Through-Silicon Via Technology in 3D Integration

Autocatalytic Deposition of Nickel–Boron Diffusion Barrier onto Diazonium-Treated SiO2 for High Aspect Ratio Through-Silicon Via Technology in 3D Integration

An ultra-deep TSV technique enabled by the dual catalysis-based electroless plating of combined barrier and seed layers

Fabrication and Characterization of Thin Metal Films Deposited by Electroless Plating with Organic Additives for Electrical Circuits Applications

Contact Info

Product

Resources

About

Autocatalytic Deposition of Nickel–Boron Diffusion Barrier onto Diazonium-Treated SiO₂ for High Aspect Ratio Through-Silicon Via Technology in 3D Integration

Autocatalytic Deposition of Nickel–Boron Diffusion Barrier onto Diazonium-Treated SiO₂ for High Aspect Ratio Through-Silicon Via Technology in 3D Integration