2006
DOI: 10.1002/ppap.200690002
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Cover Picture: Plasma Process. Polym. 2/2006

Abstract: Cover: AFM scans (5µm × 5µm) of 500 nm thick films as deposited on Si from processes a) RFICP (full vertical scale: 12.6 nm), b) MIRA (full vertical scale: 44.9 nm), and c) DECRP (full vertical scale: 27.7 nm). Further details can be found in the Full Paper by P. Supiot,* C. Vivien, A. Granier, A. Bousquet, A. Mackova, D. Escaich, R. Clergereaux, P. Raynaud, Z. Stryhal, and J. Pavlik on page 100.

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Cited by 16 publications
(28 citation statements)
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“…[36][37][38][39] Generally, these deposited films are described as branched, highly cross-linked, insoluble in nature, pinhole free, and highly adhesive to most of the substrates. [40][41][42] A plasma deposited siloxane layer can act as an interfacial modifier for improving adhesion and corrosion resistance creating chemical bonds between the siloxane and metal interface. [43] The deposition of polyhydrogenmethylsiloxane and tetraethyl orthosilicate on SS substrates improved the adhesion strength towards silicon elastomers.…”
Section: Introductionmentioning
confidence: 99%
“…[36][37][38][39] Generally, these deposited films are described as branched, highly cross-linked, insoluble in nature, pinhole free, and highly adhesive to most of the substrates. [40][41][42] A plasma deposited siloxane layer can act as an interfacial modifier for improving adhesion and corrosion resistance creating chemical bonds between the siloxane and metal interface. [43] The deposition of polyhydrogenmethylsiloxane and tetraethyl orthosilicate on SS substrates improved the adhesion strength towards silicon elastomers.…”
Section: Introductionmentioning
confidence: 99%
“…Organosilicon films were obtained using remote plasmaenhanced CVD decomposition of 1,1,3,3,-tetramethyldisiloxane precursor (TMDSO) premixed with oxygen induced in a N 2 plasma afterglow [12]. The formed plasma polymer (p-TMDSO) film was deposited at room temperature on the gilded slide glass plate with a deposition rate of 0.14 nm s −1 .…”
Section: Preparation Of the Gold/organosilicon Composite Slidesmentioning
confidence: 99%
“…Different technologies based on plasma-enhanced chemical vapor deposition (PECVD) processes are available to deposit organosilicon plasma polymers. Their advantage over chemical processes is the wide range of settings and changeable parameters such as the gas flow rates, the gas ratio, the type of plasma used, which enable to accurately control the growing film characteristics such as the refractive index, the thickness, and the extinction coefficient [12][13][14][15]. Organosilicon films with thicknesses between 500 nm and 1 mm have been deposited on (1 1 1) silicon wafer substrates using the PECVD technique and the film structure, optical properties and morphology have been investigated using FT-IR spectroscopy, ellispometry, X-ray reflectivity, atomic force microscopy (AFM), and contact angle measurements [12].…”
Section: Introductionmentioning
confidence: 99%
“…The tetramethyldisiloxane (TMDSO) monomer was polymerized to ppTMDSO by Remote Plasma Enhanced Chemical Vapor Deposition (RPECVD) [31]. TMDSO (25 cm 3 /min) was co-fed with O 2 (5 cm 3 /min) at 550 Pa in the cold zone, far (at 1 m) from the microwave discharge, in the presence of plasmagenic atomic nitrogen species that flowed over the sample holder.…”
Section: Introductionmentioning
confidence: 99%