“…Different technologies based on plasma-enhanced chemical vapor deposition (PECVD) processes are available to deposit organosilicon plasma polymers. Their advantage over chemical processes is the wide range of settings and changeable parameters such as the gas flow rates, the gas ratio, the type of plasma used, which enable to accurately control the growing film characteristics such as the refractive index, the thickness, and the extinction coefficient [12][13][14][15]. Organosilicon films with thicknesses between 500 nm and 1 mm have been deposited on (1 1 1) silicon wafer substrates using the PECVD technique and the film structure, optical properties and morphology have been investigated using FT-IR spectroscopy, ellispometry, X-ray reflectivity, atomic force microscopy (AFM), and contact angle measurements [12].…”