Cr-Containing Ferromagnetic Film–Topological Insulator Heterostructures as Promising Materials for the Quantum Anomalous Hall Effect

Petrov, Evgeniy K.; Silkin, Igor V.; Menshchikova, Tatiana V.; Chulkov, Eugene V.

doi:10.1134/s0021364019020127

Cited by 16 publications

(12 citation statements)

References 44 publications

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“…[190]. In addition to these, intrinsic magnetic TIs, such as, CrBi 2 Se 4 , [ 195 ] MnBi 2 Se 4 , [ 127 ] MnBi 2 Te 4 [ 128,129 ] and superlattice structures, such as MnBi 8 Te 13 , [ 196 ] as well as dilute magnetic doped TI have both surface as well as bulk bandgaps, and some of these are conventional insulators in the monolayer limit. Hence, these materials can also be used as the ferromagnetic insulator (FMI) in such heterostructures.…”

Section: Recent Results In Topological Insulator (Ti) – Magnetic Materials (Mm) Heterostructuresmentioning

confidence: 99%

“…Petrov et al. studied heterostructures of both van der Waals ferromagnet monolayer‐CrI 3 , and intrinsic MTI CrBi 2 Se 4 with Bi 2 Se 3 [ 195 ] through ab initio calculations. Figure a,b show the band structures at the interfaces.…”

Section: Recent Results In Topological Insulator (Ti) – Magnetic Materials (Mm) Heterostructuresmentioning

confidence: 99%

Section: Recent Results In Topological Insulator (Ti) – Magnetic Materials (Mm) Heterostructuresmentioning

confidence: 99%

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Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

et al. 2021

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Inducing long‐range magnetic order in 3D topological insulators can gap the Dirac‐like metallic surface states, leading to exotic new phases such as the quantum anomalous Hall effect or the axion insulator state. These magnetic topological phases can host robust, dissipationless charge and spin currents or unique magnetoelectric behavior, which can be exploited in low‐energy electronics and spintronics applications. Although several different strategies have been successfully implemented to realize these states, to date these phenomena have been confined to temperatures below a few Kelvin. This review focuses on one strategy: inducing magnetic order in topological insulators by proximity of magnetic materials, which has the capability for room temperature operation, unlocking the potential of magnetic topological phases for applications. The unique advantages of this strategy, the important physical mechanisms facilitating magnetic proximity effect, and the recent progress to achieve, understand, and harness proximity‐coupled magnetic order in topological insulators are discussed. Some emerging new phenomena and applications enabled by proximity coupling of magnetism and topological materials, such as skyrmions and the topological Hall effect, are also highlighted, and the authors conclude with an outlook on remaining challenges and opportunities in the field.

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Section: Recent Results In Topological Insulator (Ti) – Magnetic Materials (Mm) Heterostructuresmentioning

confidence: 99%

Section: Recent Results In Topological Insulator (Ti) – Magnetic Materials (Mm) Heterostructuresmentioning

confidence: 99%

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Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

et al. 2021

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“…However, our data does not show evidence of such an intercalation. Other interfacial effects, including charge transfer at the TI/MI interface and band bending could explain the absence of induced magnetism in the TI and the lack of observation of the QAHE [51][52][53][54][55]. Another possibility for the absence of proximity effects would be the presence of a magnetic dead layer at the TI/EuS interface.…”

mentioning

confidence: 99%

Absence of Magnetic Proximity Effect at the Interface of Bi2Se3 and (

et al. 2020

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“…[172]. In addition to these, intrinsic magnetic TIs, such as, CrBi 2 Se 4 [177], and superlattice structures, such as MnBi 8 Te 13 [178], as well as dilute magnetic doped TI have both surface as well as bulk band gaps, and some of these are conventional insulators in the monolayer limit. Hence, these materials can also be used as the ferromagnetic insulator (FMI) in such heterostructures [24,179].…”

Section: Van Der Waals Layered Ferromagnetic Materialsmentioning

confidence: 99%

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

Bhattacharyya,

Akhgar,

Gebert

et al. 2020

Preprint

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Inducing long-range magnetic order in three-dimensional topological insulators can gap the Diraclike metallic surface states, leading to exotic new phases such as the quantum anomalous Hall effect or the axion insulator state. These magnetic topological phases can host robust, dissipationless charge and spin currents or unique magnetoelectric behavior, which can be exploited in low-energy electronics and spintronics applications. Although several different strategies have been successfully implemented to realize these states, to date these phenomena have been confined to temperatures below a few Kelvin. In this review, we focus on one strategy, inducing magnetic order in topological insulators by proximity of magnetic materials, which has the capability for room temperature operation, unlocking the potential of magnetic topological phases for applications. We discuss the unique advantages of this strategy, the important physical mechanisms facilitating magnetic proximity effect, and the recent progress to achieve, understand, and harness proximity-coupled magnetic order in topological insulators. We also highlight some emerging new phenomena and applications enabled by proximity coupling of magnetism and topological materials, such as skyrmions and the topological Hall effect, and we conclude with an outlook on remaining challenges and opportunities in the field.

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Cr-Containing Ferromagnetic Film–Topological Insulator Heterostructures as Promising Materials for the Quantum Anomalous Hall Effect

Cited by 16 publications

References 44 publications

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

Absence of Magnetic Proximity Effect at the Interface of Bi2Se3 and (

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

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