Crack-Free Silicon-Nitride-on-Insulator Nonlinear Circuits for Continuum Generation in the ${C}$ -Band

Dirani, Houssein El; Casale, Marco; Kerdilès, S.; Socquet-Clerc, C.; Letartre, Xavier; Monat, Christelle; Sciancalepore, Corrado

doi:10.1109/lpt.2018.2790045

Cited by 40 publications

(24 citation statements)

References 16 publications

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“…The deposition is carried out with a tailored ultra-low deposition rate (<2 nm/ min) to produce a very high quality film, which is denser optically and highly nonlinear (n 2 ¼ 3:6 Â 10 À15 cm 2 W À1 ). 15 Critically, under such a low deposition rate which is 40% lower than that of standard LPCVD silicon nitride reported in Ref. 19 and 30% lower than the deposition rate mentioned in Ref.…”

mentioning

confidence: 76%

“…Very recently, we reported a method that avoids thermal annealing for growing relatively thick (740 nm) crack-free Si 3 N 4 -based straight nanowaveguides with good linear and nonlinear properties, as measured by self-phase modulation of picosecond pulses propagating along these waveguides. 15 In this paper, we report a comb generated from a microresonator made in an intrinsically CMOS-compatible annealingfree silicon nitride, following a tailored deposition method and without the typical hour-long 1200 C post-annealing that is detrimental to the integration with front-end silicon optoelectronic circuits. Our annealing-free and crack-free fabrication process (shown in Fig.…”

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confidence: 99%

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Annealing-free Si3N4 frequency combs for monolithic integration with Si photonics

Dirani

Kamel

Casale

et al. 2018

Applied Physics Letters

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Silicon-nitride-on-insulator (SiNOI) is an attractive platform for optical frequency comb generation in the telecommunication band because of the low two-photon absorption and free carrier induced nonlinear loss when compared with crystalline silicon. However, high-temperature annealing that has been used so far for demonstrating Si3N4-based frequency combs made co-integration with silicon-based optoelectronics elusive, thus reducing dramatically its effective complementary metal oxide semiconductor (CMOS) compatibility. We report here on the fabrication and testing of annealing-free SiNOI nonlinear photonic circuits. In particular, we have developed a process to fabricate low-loss, annealing-free, and crack-free Si3N4 740-nm-thick films for Kerr-based nonlinear photonics featuring a full process compatibility with front-end silicon photonics. Experimental evidence shows that micro-resonators using such annealing-free silicon nitride films are capable of generating a frequency comb spanning 1300–2100 nm via optical parametrical oscillation based on four-wave mixing. This work constitutes a decisive step toward time-stable power-efficient Kerr-based broadband sources featuring full process compatibility with Si photonic integrated circuits on CMOS lines.

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confidence: 76%

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confidence: 99%

Annealing-free Si3N4 frequency combs for monolithic integration with Si photonics

Dirani

Kamel

Casale

et al. 2018

Applied Physics Letters

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“…In early 2018, we reported a new method that avoids thermal annealing for growing relatively thick (740 nm) crack-free Si 3 N 4 -based straight nanowaveguides with good linear and nonlinear properties measured by self-phase modulation [33].…”

Section: Optical Frequency Comb Generation In Annealing-and Crack-frementioning

confidence: 99%

“…To control the strain and to prevent cracks from appearing, the silicon nitride layer is deposited on a (non-patterned) substrate via low-pressure chemical vapor deposition (LPCVD) in two steps of 370-nm-thick layers each. The deposition is performed with a tailored ultra-low deposition rate (~2 nm/min) to yield a very high quality film [33]. Under such low deposition rates, the thermal activation energy enables silicon and nitrogen to be disposed at the silicon nitride film surface via atomic surface migration phenomena, while compelling hydrogen to escape the film.…”

Section: Optical Frequency Comb Generation In Annealing-and Crack-frementioning

confidence: 99%

A Versatile Silicon-Silicon Nitride Photonics Platform for Enhanced Functionalities and Applications

et al. 2019

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Silicon photonics is one of the most prominent technology platforms for integrated photonics and can support a wide variety of applications. As we move towards a mature industrial core technology, we present the integration of silicon nitride (SiN) material to extend the capabilities of our silicon photonics platform. Depending on the application being targeted, we have developed several integration strategies for the incorporation of SiN. We present these processes, as well as key components for dedicated applications. In particular, we present the use of SiN for athermal multiplexing in optical transceivers for datacom applications, the nonlinear generation of frequency combs in SiN micro-resonators for ultra-high data rate transmission, spectroscopy or metrology applications and the use of SiN to realize optical phased arrays in the 800–1000 nm wavelength range for Light Detection And Ranging (LIDAR) applications. These functionalities are demonstrated using a 200 mm complementary metal-oxide-semiconductor (CMOS)-compatible pilot line, showing the versatility and scalability of the Si-SiN platform.

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“…(11) Izumi et al (12) reported a near-infrared photodetection of β-FeSi 2 /Si heterojunction photodiodes with a responsivity of 16.6 mA/W. Therefore, in this study, the responsivity and quantum efficiency of p-Si/i-β-FeSi 2 /n-Si double-heterostructure photodiodes are investigated by self-developed analytical methods.…”

Section: Introductionmentioning

confidence: 98%

Analyses of Responsivity and Quantum Efficiency of p-Si/i-β-FeSi2/n-Si Photodiodes

2018

Sensors and Materials

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Keywords: p-Si/i-β-FeSi 2 /n-Si photodiode, responsivity, quantum efficiencyIn this study the responsivity and quantum efficiency of p-Si/i-β-FeSi 2 /n-Si doubleheterostructure photodiodes and p-Si/i-Si/n-Si photodiodes are investigated by self-developed analytical methods. The dark current densities of both β-FeSi 2 and Si p-i-n photodiodes under the reverse bias condition are calculated by solving the diffusion current densities of minority carriers. The photocurrent densities of both p-i-n photodiodes under illumination with reverse bias are mainly calculated by solving the drift current densities in the depletion regions. When the β-FeSi 2 p-i-n photodiode incident wavelength, λ, is less than 0.6 µm, the magnitudes of responsivity and quantum efficiency are almost zero for different intrinsic thicknesses. The maximum responsivity, R = 0.65 A/W, and quantum efficiency, η = 65%, are both at λ = 1.2 µm and the intrinsic β-FeSi 2 layer thickness is 100 µm. The calculated responsivity of the Si p-i-n photodiode is consistent with the reported studies. Therefore, the analysis methods and results are valid in this work. These results indicate the high applicability of β-FeSi 2 to near-infrared photodiodes integrated with Si. Therefore, the p-Si/i-β-FeSi 2 /n-Si photodiode is a new highefficiency light sensor device applicable to optical fiber communications.

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Crack-Free Silicon-Nitride-on-Insulator Nonlinear Circuits for Continuum Generation in the ${C}$ -Band

Cited by 40 publications

References 16 publications

Annealing-free Si3N4 frequency combs for monolithic integration with Si photonics

Annealing-free Si3N4 frequency combs for monolithic integration with Si photonics

A Versatile Silicon-Silicon Nitride Photonics Platform for Enhanced Functionalities and Applications

Analyses of Responsivity and Quantum Efficiency of p-Si/i-β-FeSi2/n-Si Photodiodes

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