Cracking assisted nucleation in chemical vapor deposition of silicon nanoparticles on silicon dioxide

Hot-wire CVD of Ge nanoparticles on Si-etched silicon dioxide

“…Al Ka radiation was used for all scans. Details of this system can be found elsewhere [31,37]. The base pressure in all chambers was $ 10 À 8 Torr.…”

Selective silicon nanoparticle growth on high-density arrays of silicon nitride

“…(d) The negative image of Part c with circles around the 16 black spots that correspond to particles greater than 5 nm in diameter. nanoparticles to better control the process [7] and it permits a wide range of radical fluxes to be explored to optimize the process [23].…”

“…HWCVD occurs when Si 2 H 6 molecules decompose on the hot filament with radicals desorbing and depositing on the heated sample surface. Fluxes were calibrated on thermally grown SiO 2 at room temperature by depositing an amorphous Si film [23]. XPS peak attenuation for the Si 2p peak of the oxide at 103.5 eV was used to establish the Si film thickness.…”

Formation of {113} facetted Si hut clusters on thin Si1−xCx films on Si(001)

“…Samples were grown in an ultra-high vacuum (UHV) chamber that has been described in detail elsewhere [10]. Si(0 0 1) substrates were chemically cleaned in 6:2:1 H 2 SO 4 :H 2 O:H 2 O 2 and HF solutions.…”

“…After vacuum annealing at about 1030 K, no C and O are left on the surface as measured by X-ray photoelectron spectroscopy (XPS). Carbon is deposited on Si(0 0 1) at room temperature by hot-wire chemical vapor deposition (HW-CVD) [10] using a heated (B2300 K) tungsten filament to dissociate ethylene at a typical pressure of 2.5 Â 10 À3 Torr. Prior to Si deposition, the C/ Si(0 0 1) samples were annealed at 975 K for 20 min.…”