Cracks in InP-based heterostructures

Franzosi, P.; Salviati, G.; Scaffardi, M.; Genova, F.; Pellegrino, Sergio; Stano, A.

doi:10.1016/s0022-0248(98)90015-x

Cited by 23 publications

(8 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure 1 shows a summary of our observations using Nomarski interference microscopy on the existence of cracks as a function of lattice misfit and epilayer thickness. Also included on this figure are corresponding observations from other related work on In,Gal-,As or In,AI1-,As tensile layers grown on InP(001) (Tsuchiya et al 1994, Chang, Lee, Chen and Chen 1994, Franzosi et al 1988). In addition, the theoretical critical thickness curve for cracking as derived from eqn.…”

Section: Q 2 Experimental Detailsmentioning

confidence: 95%

“…Murray, Kiely, Goodhew and Hopkinson (1993) have shown that for In,(GaAl),-,As epilayers grown on InP(OO1) with negative misfits greater than 0.01, strain relaxation is brought about by the creation of a combination of interfacial misfit dislocations (both 60" and 90" type) and an array of vertical cracks on (1 10) and (1TO) planes. Furthermore, Franzosi et al (1988) have demonstrated that similar cracks in ternary III-V alloys grown on InP(OO1) actually cross the interface and propagate down into the substrate. The ability to grow uncracked tensile strained epilayers is an essential requirement for a number of advanced optoelectronic device applications.…”

Section: Introduciionmentioning

confidence: 99%

See 1 more Smart Citation

Crack formation in III-V epilayers grown under tensile strain on InP(001) substrates

Murray

Kiely

Hopkinson

1996

Philosophical Magazine A

View full text Add to dashboard Cite

Section: Q 2 Experimental Detailsmentioning

confidence: 95%

Section: Introduciionmentioning

confidence: 99%

Crack formation in III-V epilayers grown under tensile strain on InP(001) substrates

Murray

Kiely

Hopkinson

1996

Philosophical Magazine A

View full text Add to dashboard Cite

“…Moreover, in Refs. 4 and 5, cracks in tensile InGaAs/InP were observed mainly parallel to ͓110͔, while for the same system Franzosi et al 8 reported preferential crack formation along ͓11 0͔. Similarly Olsen et al 9 observed cracks only parallel to ͓11 0͔ in tensile InGaP/GaAs layers.…”

Section: Introductionmentioning

confidence: 91%

Crack formation in tensile InGaAs/InP layers

Natali¹,

Salvador²,

Berti³

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

Self Cite

View full text Add to dashboard Cite

A systematic investigation of crack formation has been performed in tensile In x Ga 1Ϫx As/InP layers with indium composition ranging from xϭ0.2 up to xϭ0.35 and thicknesses ranging from 8 nm to 2 m. It has been found that cracks form after growth and on a characteristic timescale of several days. The formation of cracks has been found to occur in a well defined thickness interval correlated to the residual strain during growth. Crack formation is favored along the ͓110͔ in-plane direction in samples with low indium composition. The results can be rationalized within a model which explicitly takes into account the fact that cracks form after growth.

show abstract

“…Another effect is related to a transition from closed to open phase trajectories of the system taking place beyond some threshold value of the lattice parameter and/or the velocity of the kink compactons. In the spirit, these phenomena can explain the possible formation of cracks out of misfit dislocations observed [32] in semiconductor heterostructures. Impurities, as well as other defects, may locally influence the breakdown threshold and thus play a major role with respect to nonlinear excitations in system.…”

Section: Resultsmentioning

confidence: 92%