Creating high-dense stacking faults and endo-grown nanoneedles to enhance phonon scattering and improve thermoelectric performance of Cu2SnSe3

Ming, Hongwei; Zhu, Chen; Chen, Tao; Yang, Shuhuan; Chen, Yong; Zhang, Jian; Li, Di; Xin, Hongxing; Qin, Xiaoying

doi:10.1016/j.nanoen.2022.107510

Cited by 25 publications

(24 citation statements)

References 58 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Its formation in the SLM process was mainly due to the low layer fault energy of the Bi 2 Te 3 material. Previous reports have shown that the introduction of SFs can scatter medium- and low-frequency phonons, thus significantly reducing the κ L . , In conclusion, the microstructure observed in n-type Bi 2 Te 2.7 Se 0.3 prepared through the SLM process confirmed that this strategy could be used to rationally design multiscale defects. The effect of multiscale defects on the carrier and phonon transport of the Bi 2 Te 2.7 Se 0.3 material is discussed in the next section.…”

Section: Resultssupporting

confidence: 60%

Broad Temperature Plateau for High Thermoelectric Properties of n-Type Bi₂Te_2.7Se_0.3 by 3D Printing-Driven Defect Engineering

Luo

Guo

et al. 2022

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

High-energy-conversion Bi 2 Te 3 -based thermoelectric generators (TEGs) are needed to ensure that the assembled material has a high value of average figure of merit (ZT ave ). However, the inferior ZT ave of the n-type leg severely restricts the large-scale applications of Bi 2 Te 3 -based TEGs. In this study, we achieved and reported a high peak ZT (1.33) of three-dimensional (3D)printing n-type Bi 2 Te 2.7 Se 0.3 . In addition, a superior ZT ave of 1.23 at a temperature ranging from 300 to 500 K was achieved. The high value of ZT ave was obtained by synergistically optimizing the electronic-and phonon-transport properties using the 3D-printing-driven defect engineering. The nonequilibrium solidification mechanism facilitated the multiscale defects formed during the 3D-printed process. Among the defects formed, the nanotwins triggered the energy-filtering effect, thus enhancing the Seebeck coefficient at a temperature range of 300−500 K. The effective scattering of wide-frequency phonons by multiscale defects reduced the lattice thermal conductivity close to the theoretical minimum of ∼0.35 W m −1 k −1 . Given the advantages of 3D printing in freeform device shapes, we assembled and measured bionic honeycombshaped single-leg TEGs, exhibiting a record-high energy conversion efficiency (10.2%). This work demonstrates the great potential of defect engineering driven by selective laser melting 3D-printing technology for the rational design of advanced n-type Bi 2 Te 2.7 Se 0.3 thermoelectric material.

show abstract

Section: Resultssupporting

confidence: 60%

Broad Temperature Plateau for High Thermoelectric Properties of n-Type Bi₂Te_2.7Se_0.3 by 3D Printing-Driven Defect Engineering

Luo

Guo

et al. 2022

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…This abnormal phenomenon implies that some other mechanism works in the doped samples. To reveal the mechanism causing the abnormal behavior of the S for the doped samples, we calculated effective mass m d * by using the following formulae , m normald * = h 2 2 k normalB T true( p normalH 4 π F 1 / 2 ( η ) true) 2 / 3 S = k normalB q [ false( λ + 2 false) F ( λ + 1 ) false( η false) false( λ + 1 false) F λ false( η false) − η ] F j ( η ) = prefix∫ 0 ∞ x j 1 − e x − η normald x where F j (η) represents the Fermi integral of j th order and η indicates the reduced Fermi level, ...…”

Section: Resultsmentioning

confidence: 99%

“…This abnormal phenomenon implies that some other mechanism works in the doped samples. To reveal the mechanism causing the abnormal behavior of the S for the doped samples, we calculated effective mass m d * by using the following formulae , where F j (η) represents the Fermi integral of j th order and η indicates the reduced Fermi level, which is given as η = E f / k B T . Assuming acoustic phonon scattering is dominant in our samples (i.e., λ = 0), we can calculate m d * for all samples from our experimental data of S and ρ H .…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Simultaneous Enhancement of the Power Factor and Phonon Blocking in Nb-Doped WSe₂

Danish

Yang

Ming

et al. 2023

ACS Appl. Mater. Interfaces

Self Cite

View full text Add to dashboard Cite

Transition-metal dichalcogenide WSe 2 is a potentially good thermoelectric (TE) material due to its high thermopower (S). However, the low electrical conductivity (σ), power factor (PF), and relatively large lattice thermal conductivity (κ L ) of pristine WSe 2 degenerate its TE performance. Here, we show that through proper substitution of Nb for W in WSe 2 , its PF can be increased by ∼10 times, reaching 5.44 μW cm −1 K −2 (at 850 K); simultaneously, κ L lowers from 1.70 to 0.80 W m −1 K −1 . Experiments reveal that the increase of PF originates from both increased hole concentration due to the replacement of W 4+ by Nb 3+ and elevated thermopower (S) caused by the enhanced density of states effective mass, while the reduced κ L comes mainly from phonon scattering at point defects Nb W . As a result, a record high figure of merit ZT max ∼0.42 is achieved at 850 K for the doped sample W 0.95 Nb 0.05 Se 2 , which is ∼13 times larger than that of pristine WSe 2 , demonstrating that Nb doping at the W site is an effective approach to improve the TE performance of WSe 2 .

show abstract

“…Ecofriendly thermoelectric material Cu 2 SnSe 3 , with a zinc blende structure, has attracted extensive attention due to its constituents being abundant and free of Pb or Te. − A lot of experimental studies have been performed to improve its thermoelectric performance. − For instance, Hu et al reported that they improved its thermoelectric performance due to enhanced crystal symmetry via Mg doping and intensified phonon scattering from dislocations and nano-precipitates; Ming et al reported a large ZT = 1.51 in the Cu 2 Sn 0.82 In 0.18 Se 2.7 S 0.3 sample through comprehensive band structure regulation and introduction of multi-dimensional defects; and a record high ZT = 1.61 was obtained in our previous work by creating high-dense stacking faults and endo-grown nanoneedles to block mid- and low-frequency phonons in Cu 2 SnSe 3 .…”

Section: Introductionmentioning

confidence: 99%

Theoretical Study of Intrinsic and Extrinsic Point Defects and Their Effects on Thermoelectric Properties of Cu₂SnSe₃

et al. 2023

Self Cite

View full text Add to dashboard Cite

Current understanding of the intrinsic point defects and potential extrinsic dopants in p-type Cu 2 SnSe 3 is limited, which hinders further improvement of its thermoelectric performance. Here, we show that the dominant intrinsic defects in Cu 2 SnSe 3 are Cu Sn and V Cu under different chemical conditions, respectively. The presence of V Cu will damage the hole conduction network and reduce hole mobility. Besides, we find that the substitution of Al, Ga, In, Cd, Zn, Fe, and Mn for Sn can inhibit the formation of V Cu ; introducing Cu Sn , Fe Sn , Mn Sn , and Ni Cu defects can significantly enhance electronic density of states near the Fermi level due to the contribution of 3d orbitals. Therefore, increasing the Cu content and/or introducing the above beneficial dopants appropriately are expected to cause enhancement of carrier mobility and/or thermopower of Cu 2 SnSe 3 . Furthermore, introducing

show abstract

Creating high-dense stacking faults and endo-grown nanoneedles to enhance phonon scattering and improve thermoelectric performance of Cu2SnSe3

Cited by 25 publications

References 58 publications

Broad Temperature Plateau for High Thermoelectric Properties of n-Type Bi₂Te_2.7Se_0.3 by 3D Printing-Driven Defect Engineering

Broad Temperature Plateau for High Thermoelectric Properties of n-Type Bi₂Te_2.7Se_0.3 by 3D Printing-Driven Defect Engineering

Simultaneous Enhancement of the Power Factor and Phonon Blocking in Nb-Doped WSe₂

Theoretical Study of Intrinsic and Extrinsic Point Defects and Their Effects on Thermoelectric Properties of Cu₂SnSe₃

Contact Info

Product

Resources

About

Creating high-dense stacking faults and endo-grown nanoneedles to enhance phonon scattering and improve thermoelectric performance of Cu2SnSe3

Cited by 25 publications

References 58 publications

Broad Temperature Plateau for High Thermoelectric Properties of n-Type Bi2Te2.7Se0.3 by 3D Printing-Driven Defect Engineering

Broad Temperature Plateau for High Thermoelectric Properties of n-Type Bi2Te2.7Se0.3 by 3D Printing-Driven Defect Engineering

Simultaneous Enhancement of the Power Factor and Phonon Blocking in Nb-Doped WSe2

Theoretical Study of Intrinsic and Extrinsic Point Defects and Their Effects on Thermoelectric Properties of Cu2SnSe3

Contact Info

Product

Resources

About

Broad Temperature Plateau for High Thermoelectric Properties of n-Type Bi₂Te_2.7Se_0.3 by 3D Printing-Driven Defect Engineering

Broad Temperature Plateau for High Thermoelectric Properties of n-Type Bi₂Te_2.7Se_0.3 by 3D Printing-Driven Defect Engineering

Simultaneous Enhancement of the Power Factor and Phonon Blocking in Nb-Doped WSe₂

Theoretical Study of Intrinsic and Extrinsic Point Defects and Their Effects on Thermoelectric Properties of Cu₂SnSe₃