Creating room temperature Ohmic contacts to 4H–SiC: studied by specific contact resistance measurements and X-ray photoelectron spectroscopy

Guy, Owen J.; Pope, G.; Blackwood, I.; Teng, Kar Seng; Chen, L.; Lee, W.Y.; Wilks, S.P.; Mawby, P.A.

doi:10.1016/j.susc.2004.09.035

Cited by 12 publications

(3 citation statements)

References 18 publications

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“…9 Although the conventional cleaning method used for Si devices may not be adoptable to SiC due to its high chemical stability and detailed research regarding the mechanisms that are involved during cleaning is lacking, the RCA method is often presumed to be the only suitable technique for SiC cleaning. [10][11][12] Mechanical polishing techniques seem to be the main surfacesmoothing treatments, which may lead to additional metal contaminants on the surface. Chemical mechanical polishing ͑CMP͒ scratch marks are often visible on research grade SiC wafers.…”

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confidence: 99%

SiC Cleaning Method by Use of Dilute HCN Aqueous Solutions

Madani¹,

Liu²,

Takahashi³

et al. 2008

J. Electrochem. Soc.

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Metal contaminants, such as Cu on SiC surfaces, cannot be completely removed by use of the conventional RCA cleaning method. After RCA cleaning, no chemical oxide is formed on the SiC surfaces, and this chemical stability is attributable to the incomplete removal of metal contaminants by the RCA method because it removes metal contaminants by oxidation and subsequent etching. Cleaning of metal-contaminated SiC with hydrogen cyanide ͑HCN͒ aqueous solutions followed by the RCA cleaning ͑or vice versa͒ can remove them completely. It is concluded that strongly adsorbed metals and metals in the bottom regions on the rough SiC surfaces cannot be removed by the RCA and HCN methods, respectively. The HCN method can remove strongly adsorbed metals because of the high reactivity of cyanide ions, while metals in the bottom regions cannot be removed because of the necessity of the formation of bulky metal-cyanide complex ions for the removal process.

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confidence: 99%

SiC Cleaning Method by Use of Dilute HCN Aqueous Solutions

Madani¹,

Liu²,

Takahashi³

et al. 2008

J. Electrochem. Soc.

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“…Prior to a SiC deposition, a sputter cleaning of the sample was carried out for 10 minutes with an N ion energy of ∼10 keV and a current of 0.5 Ampere. Then, the electron beam evaporative deposition of the SiC was performed to 50 nm thickness, followed by a nitrogen ion beam mixing at 70keV with a dose of ~ 5x10 16 ions/cm 2 . A further SiC evaporative deposition up to a total of ~ 1 μm was then conducted with a deposition rate of ∼3 Å/s produced by an electron beam current of ∼0.15 A.…”

Section: Methodsmentioning

confidence: 99%

Enhanced adhesion of coating layers by Ion Beam Mixing: An application for nuclear hydrogen production

et al. 2011

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The bonding between two dissimilar materials has been a problem, partiularly in coating metals with non-metallic protective layer. In this work, it is demonstrated that a strong bonding between ceramics/metal can be achieved by mixing the atoms at the interface by ion-beam. Specifically, SiC coating on Hastelloy X was studied for a high temperature corrosion protection. Auger elemental mapping across the interface shows a far broader mixed region than the region expected by SRIM calculation, which is thought to be due to the thermal spike liquid state diffusion. The results showed that, although the thermal expansion coefficient of Hastelloy X is about three times higher than that of SiC, the film did not peel-off at above 900 o C confirming excellent adhesion. Instead, the SiC film was cracked along the grain boundary of the substrate above 700 o C. At above 900 o C, the film was crystallized forming islands on the substrate so that a considerable part of the substrate surface could be exposed to the corrosive environment. To cover the exposed area, it is suggested that the coating/IBM process should be repeated multiply.

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“…5) what seems to be ideal for MOSFETs of JFETs where the source and p-well contact are formed very close to each other in order to avoid latch-up effects, e.g. Recently, a contact formation method was suggested by Guy et al avoiding the need to perform a high temperature sintering step (13). They found that by special silicon pretreatment ohmic behavior can be achieved directly after the deposition of nickel to the SiC surface.…”

Section: Ohmic Contactsmentioning

confidence: 99%

SiC Power Device Technology - Differences to Silicon and Their Influence on Device Processing and Performance

Friedrichs¹

2009

ECS Trans.

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The paper summarizes important challenges in manufacturing silicon carbide based power devices on an industrial scale. Special emphasize is paid to processes which differ considerably from well know silicon power device process flows and processing conditions. In general, higher temperatures used in the processing of silicon carbide devices represent a challenge for both, equipment manufacturers and device design experts. The main topics discussed in the contribution are processes for annealing ion implanted species, the formation of ohmic contacts as well as the crucial question of forming high quality interfaces between SiC and insulating materials for MOS based power devices structures. Finally, progress will be presented how to suppress the forward drift effects in silicon carbide high voltage bipolar devices in order to open up a commercial future for this device family.

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Creating room temperature Ohmic contacts to 4H–SiC: studied by specific contact resistance measurements and X-ray photoelectron spectroscopy

Cited by 12 publications

References 18 publications

SiC Cleaning Method by Use of Dilute HCN Aqueous Solutions

SiC Cleaning Method by Use of Dilute HCN Aqueous Solutions

Enhanced adhesion of coating layers by Ion Beam Mixing: An application for nuclear hydrogen production

SiC Power Device Technology - Differences to Silicon and Their Influence on Device Processing and Performance

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