To fill electroless nickel to submicrometer trenches on the SiO 2 surface, a Pd-activated self assembled monolayer (SAM) of aminopropyltrimethoxy silane was formed on the surface of SiO 2 substrate. The bottom-up electroless nickels filling was first achieved by electroless plating bath with an addition of polyacrylic acid, and the trenches with the widths ranging from 80 to 280 nm were filled completely by electroless nickel. The effects of polyacrylic acid on the polarization behaviors of nickel reduction and sodium hypophosphite oxidation were investigated by the linear sweep voltammetry method and mixed potential theory.The Damascene process has been widely used for Cu metallization of ultra-large scale integrated (ULSI) circuits. For the Damascene process, the superior diffusion barrier layer and copper seed layer were deposited on the surface of SiO 2 by physical vapor deposition (PVD) or chemical vapor deposition (CVD). 1 Then the via-holes or trenches were filled completely by bottom-up electroplated copper solution. 2 As the demand for electronic devices with higher density and performance increases, the feature size decreases to about 50 nm, and it is difficult to deposit a desirable barrier layer and Cu seed layer at the inside of trenches/vias owing to the inherent poor step coverage of physical vapor deposition (PVD).Recently, electroless copper deposition has been expected to be useful for the fabrication of ULSI copper interconnections as an alternative to electrodeposition because of its excellent step coverage capability and a good uniformity. Wang group and Osaka group achieved bottom-up Cu filling in electroless plating bath with an addition of inhibitor, such as, EPE-8000 or PEG-4000). 3,4 The complete bottom-up fillings of electroless copper plating were obtained by the synergy effects of the accelerators with small molecular weight and the inhibitors with large molecular weigh, such as SPS and PEG-4000 or 2-MBT and PE-3650. 5-7 Shingubara et al. 8,9 achieved void-free filling of high aspect ratio via holes with the addition of SPS and investigated on the bottom-up filling behavior of the plating bath containing mercapto alkyl carboxylic acids. 10 Osaka group achieved void-free electroless copper deposition in submicrometer trenches in the presence of the combination of polyethylene glycol (PEG) and HIQS. 11,12 Though the bottom-up fillings of electroless copper plating were studied, the research for bottom-up filling of electroless nickel plating has not been reported. In this paper, bottom-up electroless nickel filling on the SiO 2 surface was obtained by Pd-activated SAM technology.
ExperimentalThe composition of the electroless nickel plating solution was NiSO 4 · 6H 2 O (0.11 mol L −1 ), lactic acid (0.13 mol L −1 ), NaH 2 PO 2 · H 2 O (0.28 mol L −1 ) as a reducing agent, PAA (Mw 3000 ∼ 5000) as inhibitor. The pH of the plating bath was adjusted to 4.5 using sodium hydroxide (NaOH), and the bath temperature was maintained at 70 • C.For the trench-filling experiments, SiO 2 /Si substrate...