1982
DOI: 10.1080/00018738200101408
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Creation of lattice defects by electronic excitation in alkali halides

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Cited by 360 publications
(59 citation statements)
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“…Accordingly, only an excited self-trapped exciton can lead to desorption of halogen atoms. It has been established that defect formation in the bulk of alkali halides is induced from excited states of the self-trapped exciton, not from the lowest state of the self-trapped exciton [40]. The conversion from an excited state of the self-trapped exciton to a pair consisting of an F centre and an H centre is considered to occur following an anti-bonding adiabatic potential surface which connects these two states, in agreement with ref.…”
Section: Comparison With Other Situationssupporting
confidence: 81%
“…Accordingly, only an excited self-trapped exciton can lead to desorption of halogen atoms. It has been established that defect formation in the bulk of alkali halides is induced from excited states of the self-trapped exciton, not from the lowest state of the self-trapped exciton [40]. The conversion from an excited state of the self-trapped exciton to a pair consisting of an F centre and an H centre is considered to occur following an anti-bonding adiabatic potential surface which connects these two states, in agreement with ref.…”
Section: Comparison With Other Situationssupporting
confidence: 81%
“…We suggest that the storage centers originate predominantly from to the well-known "Itoh-process" 14,15,22 which is valid for alkali halides. It is very probable that the creation of the F-and V K -centers in Eu-doped CsBr occurs similarly to the undoped CsBr.…”
Section: Discussionmentioning
confidence: 99%
“…Is. Расчеты показали 1S1 , что такой переход может осуществ-ляться за 10" 11 с, что согласуется с экспериментом 102 > 134 . Рассмотренная модель распада е° с рождением F, Н-пар предсказывает возможность создания дефектов при оптическом возбуждении e°s, имевших до этого электронную компоненту в состоянии Is.…”
Section: электростатические механизмы образования дефектов а) основныunclassified