Creation of Step-Shaped Energy Band in a Novel Double-Gate GNRFET to Diminish Ambipolar Conduction

Anvarifard, Mohammad K.; Nirmal, D.

doi:10.1109/ted.2021.3069442

Cited by 8 publications

(2 citation statements)

References 18 publications

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“…10d) 82 . However, simple design strategies like asymmetrically doped source/drain structures 83 and pocket doped channel regions 84 are also reasonably effective in suppressing the ambipolar BTBT and improving the overall performance of GrNR-TFET.…”

Section: Tfets Based On Graphene Familymentioning

confidence: 99%

2D materials-based nanoscale tunneling field effect transistors: current developments and future prospects

et al. 2022

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The continuously intensifying demand for high-performance and miniaturized semiconductor devices has pushed the aggressive downscaling of field-effect transistors (FETs) design. However, the detrimental short-channel effects and the fundamental limit on the sub-threshold swing (SS) in FET have led to a drastic increase in static and dynamic power consumption. The operational limit of nanoscale transistors motivates the exploration of post-CMOS devices like Tunnel FET (TFET), having steeper SS and immunity toward short channel effects. Thus the field of nanoscale 2D-TFET has gained compelling attention in recent times. The nanoscale TFET, with two-dimensional (2D) semiconductor materials, has shown a significant improvement in terms of higher on-state current and lower sub-threshold swing. In this context, the review presented here has comprehensively covered the gradual development and present state-of-arts in the field of nanoscale 2D-TFET design. The relative merits and demerits of each class of 2D materials are identified, which sheds light on the specific design challenges associated with individual 2D materials. Subsequently, the potential device/material co-optimization strategies for the development of efficient TFET designs are highlighted. Next, the experimental development in 2D-TFET design is discussed, and specific synthesis/fabrication challenges for individual material systems are indicated. Finally, an extensive comparative performance study is presented between the simulated as well as experimentally reported potential 2D materials and state-of-the-art bulk material-based TFETs.

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Section: Tfets Based On Graphene Familymentioning

confidence: 99%

2D materials-based nanoscale tunneling field effect transistors: current developments and future prospects

et al. 2022

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“…However, as the demand for advanced electronic devices continues to rise, the size limitations of silicon-based transistors have become increasingly challenging, and there will eventually be physical limits to further miniaturization. The main obstacle in this regard is the occurrence of short-channel effects (SCE), such as leakage current, subthreshold swing (SS), drain-induced barrier lowering (DIBL), and velocity saturation, which are consequences of decreasing the distance between the source and drain 3 – 5 . In recent times, researchers have actively pursued extensive research to explore novel materials that could overcome these limitations.…”

Section: Introductionmentioning

confidence: 99%

The understanding of the impact of efficiently optimized underlap length on analog/RF performance parameters of GNR-FETs

Ahmad,

Kumar

2023

Sci Rep

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The aim of this study is to examine the analog/RF performance characteristics of graphene nanoribbon (GNR) field-effect transistors (FETs) using a novel technique called underlap engineering. The study employs self-consistent atomistic simulations and the non-equilibrium Green's function (NEGF) formalism. Initially, the optimal underlap length for the GNR-FET by device has been determined evaluating the ON-current (ION) to OFF-current (IOFF) ratio, which is a critical parameter for digital applications. Subsequently, the impact of underlap engineering on analog/RF performance metrics has been analyzed and conducting a comprehensive trade-off analysis considering parameters such as intrinsic-gain, transistor efficiency, and device cut-off frequency. The results demonstrate that the device incorporating the underlap mechanism exhibits superior performance in terms of the ION/IOFF ratio, transconductance generation factor (TGF), output resistance (r0), intrinsic gain (gmr0), gain frequency product (GFP), and gain transfer frequency product (GTFP). However, the device without the underlap effect demonstrates the highest transconductance (gm) and cut-off frequency (fT). Finally, a linearity analysis has been conducted to compare the optimized GNR-FET device with the conventional GNR-FET device without the underlap effect.

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Geometric and Electronic Properties of Graphene Nanoribbons

Gadtya,

Deshmukh,

Moharana

2024

Handbook of Functionalized Carbon Nanostructures

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Creation of Step-Shaped Energy Band in a Novel Double-Gate GNRFET to Diminish Ambipolar Conduction

Cited by 8 publications

References 18 publications

2D materials-based nanoscale tunneling field effect transistors: current developments and future prospects

2D materials-based nanoscale tunneling field effect transistors: current developments and future prospects

The understanding of the impact of efficiently optimized underlap length on analog/RF performance parameters of GNR-FETs

Geometric and Electronic Properties of Graphene Nanoribbons

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