Crevice Corrosion of Ball Bond Intermetallics of Cu and Ag Wire

Soestbergen, M. van; Mavinkurve, A.; Zaal, J.J.M.; O'Halloran, G.M.; Rongen, R.T.H.; Farrugia, Mark Luke

doi:10.1109/ectc.2016.192

Cited by 9 publications

(2 citation statements)

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“…The absorbed moisture can dissolve ionic substances in the molding compound and form a thin electrolyte layer around the metal materials. Due to the different electrochemical activities of Cu-Al IMCs, Cu, and Al, galvanic corrosion may occur at the Cu-Al bonding interface [ 69 ]. As cracks caused by corrosion propagate towards the center of the bonding interface, crevice corrosion may also occur within the narrow region of the crack, further accelerating crack propagation.…”

Section: Bonding Reliabilitymentioning

confidence: 99%

Copper Wire Bonding: A Review

et al. 2023

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This paper provides a comprehensive review on copper (Cu) wire bonding. Firstly, it introduces the common types of Cu wire available in the market, including bare Cu wire, coated Cu wire, insulated Cu wire, and alloyed Cu wire. For each type, their characteristics and application areas are discussed. Additionally, we provide detailed insights into the impact of Free Air Ball (FAB) morphology on bonding reliability, including its effect on bond strength and formation mechanisms. Next, the reliability of Cu wire bonding is analyzed, with a focus on the impact of intermetallic compounds and corrosion on bonding reliability. Specifically, the formation, growth, and stability of intermetallic compounds at bonding interfaces are discussed, and their effects on bonding strength and reliability are evaluated. The detrimental mechanisms of corrosion on Cu wire bonding and corrosion inhibition methods are also analyzed. Subsequently, the applications of simulation in Cu wire bonding are presented, including finite element analysis and molecular dynamics simulations, which provide important tools for a deeper understanding of the bonding process and failure mechanisms. Finally, the current development status of Cu wire bonding is summarized, and future research directions are discussed.

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Section: Bonding Reliabilitymentioning

confidence: 99%

Copper Wire Bonding: A Review

et al. 2023

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“…The encapsulation process mainly involves the use of epoxy molding compound (EMC). EMC is widely applied for semiconductor packaging due to its low cost and easy processability, but it inevitably contains halogen elements and ions such as sulfur [8,10,13,20,[24][25][26]. Due to the hydrophilic nature of EMC, it readily absorbs moisture from the air and promotes ion diffusion, creating a corrosive environment with electrolytes [6,20,27,28].…”

Section: Introductionmentioning

confidence: 99%

Influence of HCl Concentration on Corrosion Behavior between Au or Cu Bonding Wires and the Bond Pad for Semiconductor Packaging

Yoo,

Kim,

Jeon

et al. 2023

Materials

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Wire bonding, one of the methods for electrically connecting a semiconductor chip with a substrate, involves attaching thin metal wires to pads. It is the oldest electrical connection method that exhibits high compatibility with other processes. The metal wires used for electrical connection in wire bonding are mainly made of Au, Cu, and Ag. After the wire bonding, molding is performed using the epoxy molding compound (EMC). However, EMC inevitably contains ions such as halogen elements. In addition, it absorbs moisture due to its hydrophilicity, creating a corrosive environment with electrolytes. In this study, we evaluated the influence of hydrochloric acid concentration on corrosion behavior between Au or Cu bonding wires and sputtered Al bond pads. The electrochemical factors such as corrosion potential difference (ΔE), galvanic corrosion current density (ig), and anodic and cathodic Tafel slopes were found to influence galvanic corrosion behavior. Galvanic corrosion tendency in first bond and second bond areas of PCB unit specimen was confirmed.

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