Criteria for the assessment of reliability models

Pecht, Michael; Shukla, Arun; Kelkar, N.; Pecht, Judy

doi:10.1109/96.618221

Cited by 22 publications

(8 citation statements)

References 12 publications

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“…Furthermore, it is possible to consider the effect of humidity by considering Peck's model [28]. This model extends the Arrhenius equation by including relative humidity to the Arrhenius model [28][29][30][31]:…”

Section: Accelerated Test Modelsmentioning

confidence: 99%

High-Voltage Temperature Humidity Bias Test (HV-THB): Overview of Current Test Methodologies and Reliability Performances

Cimmino

Ferrero

2020

Electronics

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The high voltage temperature humidity bias test (HV-THB) has become increasingly popular for evaluating the performances of power semiconductor devices. Given the new challenges of the power semiconductor industry, several applications and devices need to be designed to withstand harsh environments during working operations, with a remarkable focus on high-humidity conditions. The HV-THB test allows one to activate and study different failure mechanisms which were not highlighted by the standard low voltage THB test, enabling new designs in several energy conversion fields, such as energy harvesting, industry and automotive applications. After a brief introduction of current test standards, this work goes through the current methodologies and state-of-the-art of the HV-THB test. The following sections are then dedicated to the knowledge about the failure mechanisms and the models for accelerated testing. Eventually, there is a section devoted to the main passivation materials in order to understand their effects on the HV-THB capabilities of the devices.

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Section: Accelerated Test Modelsmentioning

confidence: 99%

High-Voltage Temperature Humidity Bias Test (HV-THB): Overview of Current Test Methodologies and Reliability Performances

Cimmino

Ferrero

2020

Electronics

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“…the ratio between the MTTF at normal-use conditions (index u) and MTTF at accelerated conditions (index a). The parameters of the formula are the activation energy E A in the range of 0.79 to 0.95 eV, Boltzmann's constant k, and the "empirical" exponent x of the RH impact in the range of 2.66 to 4.64 [9].…”

Section: Acceleration Modelmentioning

confidence: 99%

Acceleration of temperature humidity bias (THB) testing on IGBT modules by high bias levels

Zorn

Kaminski

2015

2015 IEEE 27th International Symposium on Power Semiconductor Devices &Amp; IC's (ISPSD)

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The temperature-humidity-bias (THB) test is the standard for accelerated stress testing with respect to corrosion and other humidity driven degradation mechanisms. Usually, 1000 hrs tests at 85 degree Celsius and 85 percent relative humidity (85/85) are used to predict up to 25 years of operation. With regard to the respective standards asking for limited selfheating, the bias was commonly limited to 80 V. Nevertheless, recent THB tests on 1.7 kV IGBT modules have shown that higher bias is a more severe test condition. Failure analysis confirmed corrosion of the Al chip-metallization as well as Cuand Ag-dendrites as the relevant failure mechanisms. In order to determine the acceleration due to bias, 1.2 kV IGBTmodules were tested in THB at 65 percent and 90 percent of their nominal voltage V nom , respectively. A characteristic degradation consisting of three phases has been identified. The 2 nd phase seems to be determined by Al corrosion and a factor of about two has been estimated for the acceleration between the aforementioned test-voltages. Within the 3 rd phase, the devices stabilized probably due to localized self-heating. Thus, this degradation mechanism is kind of self-limiting, but the higher leakage increases the risk of thermal runaway, i.e. catastrophic breakdown especially when biased close to V nom .

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“…To model the acceleration factor of the THB test, Peck's model [37][38][39][40] is used. It is a statistical review of time to failure experiments of several decades (!)…”

Section: Acceleration Factormentioning

confidence: 99%

Temperature–humidity–bias testing on insulated‐gate bipolartransistor modules – failure modes and acceleration due to high voltage

Zorn

Kaminski

2015

IET Power Electronics

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The temperature-humidity-bias (THB) test is the standard for accelerated stress testing with respect to corrosion and other humidity driven degradation mechanisms. Usually, 1000 h tests at 85°C and 85% relative humidity are used to predict up to 25 years of operation. The bias is usually limited to 80 V in order to fulfil the respective standards. Nevertheless, THB tests on 1700 V insulated-gate bipolar transistor (IGBT)-modules have shown that higher bias is a more severe test condition. The failure analysis confirmed Cu-and Ag-dendrites and corrosion of the aluminium (Al)-chip-metallisation as the relevant failure mechanisms. To determine the acceleration factor due to voltage, 1200 V IGBT modules were tested in THB at 780 V (65% of V CES) and 1080 V (90% of V CES). A characteristic degradation consisting of three phases has been identified. The second phase seems to be determined by Al corrosion and an acceleration factor of about two has been estimated from 780 to 1080 V. Within the third phase, the devices stabilised probably due to localised self-heating. Thus, this degradation mechanism is kind of self-limiting, but the higher leakage also increases the risk of thermal runaway especially when biased close to the rated collector-emitter voltage.

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Criteria for the assessment of reliability models

Cited by 22 publications

References 12 publications

High-Voltage Temperature Humidity Bias Test (HV-THB): Overview of Current Test Methodologies and Reliability Performances

High-Voltage Temperature Humidity Bias Test (HV-THB): Overview of Current Test Methodologies and Reliability Performances

Acceleration of temperature humidity bias (THB) testing on IGBT modules by high bias levels

Temperature–humidity–bias testing on insulated‐gate bipolartransistor modules – failure modes and acceleration due to high voltage

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