Criterion for suppressing wafer bow in heterostructures by selective epitaxy

El‐Masry, N. A.; Hussien, S. A.; Fahmy, A. A.; Karam, N.H.; Bedair, S. M.

doi:10.1016/0167-577x(92)90105-s

Cited by 5 publications

(1 citation statement)

References 6 publications

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“…Heteroepitaxial structures (such as Si-Ge alloys) are gaining prominence for advanced electronic [1][2] and optoelectronic devices [3][4][5]. Second, there is a need to decrease the curvature in a heterostructure as it could pose a problem for device fabrication [11]. Growth of lattice mismatched structures causes wafer bending or curvature.…”

Section: Introductionmentioning

confidence: 99%

A Model for Curvature in Film-Substrate System

2005

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Growth of lattice mismatched films creates bending in the whole structure. There has been great interest in the study of these curvatures in epitaxially-grown materials. An analytical solution for the radius of curvature produced by stresses developed in growing lattice mismatched materials has been obtained. The analyses were based on beam bending theory and strain partitioning theory introduced by our group earlier. The expressions for radius of curvature were obtained for a two-layer heterostructure. The variation of the radius of curvature with the relative thicknesses, relative lattice constants, and relative elastic constants of the layers was determined. The model was verified by applying it to a symmetric tri-laminate structure. The above model can also be extended to determine the curvature for multi-layered heterostructures.

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