Critical behavior in itinerant ferromagnet <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si45.gif" overflow="scroll"><mml:mrow><mml:msub><mml:mrow><mml:mtext>SrRu</mml:mtext></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>-</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mtext>Ti</mml:mtext></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mtext>O</mml:mtext></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow

Gupta, Renu; Bhatti, Imtiaz Noor; Pramanik, A. K.

doi:10.1016/j.jmmm.2018.05.105

Cited by 10 publications

(13 citation statements)

References 26 publications

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“…The details of samples preparation and characterization of ingredients and temperature used have been discussed elsewhere. [13,14] Temperature and field dependent magnetic measurements have been done using SQUID. Further, the dc electrical resistivity ρ(T ) and magnetoresistance (MR) data are collected using a home-built setup attached with Oxford superconducting magnet by following the four probe technique, in the temperature.…”

Section: Methodsmentioning

confidence: 99%

“…[17,19] Recently, we have studied the evolution of magnetic behavior in SrRu 1−x Ti x O 3 where the non-change of T c across the series has been explained with an opposite change of U and N(ǫ F ) with x within the model of itinerant FM. [13,14] Here, we have focused on evolution of transport behavior by Ti substitution. Previous studies have shown that Ti substitution induces a metal-insulator transition around x = 0.5 in SrRu 1−x Ti x O 3 , however, the detail study of electrical transport behavior in presence of magnetic field and the study related to evolution of electronic correlation is lacking.…”

Section: Introductionmentioning

confidence: 99%

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Electronic properties in itinerant ferromagnet SrRu_1−xTi_xO₃

Gupta

Rawat

Pramanik

2020

J. Phys.: Condens. Matter

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SrRuO 3 presents a rare example of ferromagnetism among the 4d based oxides. While the nature of magnetic state in SrRuO 3 is mostly believed to be of itinerant type, recent studies suggest a coexistence of both itinerant and localized model of magnetism in this material. Here, we have investigated the evolution of magnetic state in doped SrRu 1−x Ti x O 3 through studying the critical behavior using standard techniques such as, modified Arrott plot, Kouvel-Fisher plot and critical isotherm analysis across the magnetic transition temperature T c . The substitution of nonmagnetic Ti 4+ (3d 0 ) for Ru 4+ (4d 4 ) would simply dilute the magnetic system apart from modifying the electron correlation effect and the density of states at Fermi level. Surprisingly, T c does not change with x. Moreover, our analysis show the exponent β related to spontaneous magnetization increases while the exponents γ and δ related to initial inverse susceptibility and critical magnetization, respectively decrease with Ti substitution. The estimated exponents do not match with any established theoretical models for universality classes, however, the exponent obey the Widom relation and the scaling behavior. Interestingly, this particular evolution of exponents in present series has similarity with that in isoelectronic doped Sr 1−x Ca x RuO 3 . We believe that site dilution by Ti leads to formation magnetic clusters which causes this specific changes in critical exponents.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Electronic properties in itinerant ferromagnet SrRu_1−xTi_xO₃

Gupta

Rawat

Pramanik

2020

J. Phys.: Condens. Matter

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“…This increase in β with Ga substitution is likely caused by formation of FM clusters across T c , as explained in case of Ti doped in SrRuO 3 . [7,8]…”

Section: Critical Exponent Behaviormentioning

confidence: 99%

“…The 4d based oxide SrRuO 3 is commonly believed to be an itinerant ferromagnet (FM) with transition temperature T c ∼ 163 K. [1,2,3,4,5,6,7,8] The itinerant character of magnetism is very evident in the fact that the observed magnetic moment (∼ 1.4 µ B /f.u), even measured in high enough magnetic field around 30 T, comes lower than its expected spin-only value, 2 µ B /f.u. [2] The nature of magnetism in SrRuO 3 closely follows the mean-field type, [3,6,9,7,8] however, recent calculations as well as experimental data indicate that this material probably hosts both itinerant and localized type of magnetism. [5,7] The electrical transport behavior in SrRuO 3 is equally interesting.…”

Section: Introductionmentioning

confidence: 99%

Site dilution and charge disorder effect on physical properties in SrRu$_{1-x}$Ga$_x$O$_3$

Gupta,

Bhatti,

Pramanik

2019

Preprint

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Here, we report an evolution of structural, magnetic and transport behavior in doped SrRu 1−x Ga x O 3 (x ≤ 0.2). The nonmagnetic dopant Ga 3+ (3d 10 ) not only acts for magnetic site dilution in SrRuO 3 but also it modifies the Ru charge state and electronic density. Our studies show that Ga 3+ substitution does not affect the original orthorhombic-Pbnm structure of SrRuO 3 which is due to its matching ionic radii with Ru 4+ . However, Ga 3+ has a substantial effect on the magnetic behavior of SrRuO 3 where it decreases both magnetic moment as well as magnetic transition temperature T c . Further, this dilution induces Griffiths phase behavior across T c and cluster-glass behavior at low temperature with higher concentration of doping. The magnetic critical exponent β increases with x due to this site dilution effect. The Ga 3+ induces an insulating state in SrRuO 3 with x > 0.05. The charge transport in paramagnetic as well as in insulating state of samples can be well described with Mott's modified variable-range-hopping model. The metallic charge transport just below T c in SrRuO 3 obeys Fermi liquid behavior which, however breaks down at low temperature. We further find a correlation between field dependent magnetoresistance and magnetization through power-law behavior over the series.

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“…5 K 0.5 ) x RuO 3 , the FM order is suppressed by La and K co‐doping, and FM quantum phase transition is avoided 22 . As for Ru site, magnetic (Fe 3+ , Co 3+ , Ir 4+ , Tc 4+ , and Mn 3+ ) and nonmagnetic (Ti 4+ , Pb 4+ , and Ga 3+ ) element substitution has been investigated 18,23‐29 . Magnetic elements participate in existing interactions, whereas nonmagnetic elements directly disrupt the coupling of 4d orbitals of Ru 4+ to the 2p orbitals of O 2− .…”

Section: Introductionmentioning

confidence: 99%

Ferromagnetic insulating behavior at low temperature induced by Sn doping in the ceramic SrRuO₃

Liu

Zhang

et al. 2021

J. Am. Ceram. Soc.

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Effects of Sn doping at Ru site on the structural, magnetic, and transport behavior of polycrystalline SrRu 1−x Sn x O 3 (x ≤ 0.1) have been investigated here. Substitution of Sn 4+ for Ru 4+ remains the same crystal symmetry with that of Sn-free SrRuO 3 , while induces the Ru(Sn)O 6 octahedral distortions. Samples with the low doping concentration (x ≤ 0.08) show a metallic behavior at high temperature, while a metal to insulator transition occurs at low temperature. On the other hand, an insulator behavior is detected for sample with x = 0.1, which follows Arrhenius-type process in the temperature range of 80-140 K and Mott's variable range hopping model in the temperature range of 140-300 K. Further, we find that Sn 4+ has a significant effect on the magnetic behavior of Sn doping in SrRuO 3 where ferromagnetic transition temperature and magnetic moment decrease rapidly due to octahedral distortion and site dilution.

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Critical behavior in itinerant ferromagnet SrRu1-xTixO3

Cited by 10 publications

References 26 publications

Electronic properties in itinerant ferromagnet SrRu_1−xTi_xO₃

Electronic properties in itinerant ferromagnet SrRu_1−xTi_xO₃

Site dilution and charge disorder effect on physical properties in SrRu$_{1-x}$Ga$_x$O$_3$

Ferromagnetic insulating behavior at low temperature induced by Sn doping in the ceramic SrRuO₃

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Critical behavior in itinerant ferromagnet SrRu1-xTixO3

Cited by 10 publications

References 26 publications

Electronic properties in itinerant ferromagnet SrRu1−x Ti x O3

Electronic properties in itinerant ferromagnet SrRu1−x Ti x O3

Site dilution and charge disorder effect on physical properties in SrRu$_{1-x}$Ga$_x$O$_3$

Ferromagnetic insulating behavior at low temperature induced by Sn doping in the ceramic SrRuO3

Contact Info

Product

Resources

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Electronic properties in itinerant ferromagnet SrRu_1−xTi_xO₃

Electronic properties in itinerant ferromagnet SrRu_1−xTi_xO₃

Ferromagnetic insulating behavior at low temperature induced by Sn doping in the ceramic SrRuO₃