2008
DOI: 10.3182/20080706-5-kr-1001.00158
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Critical Dimension and Real-Time Temperature Control for Warped Wafers

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Cited by 1 publication
(2 citation statements)
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“…The corresponding temperature results are tabulated in Tables 2 and 3 and shown in Figure 8 as experimental run ( 5) and run (6). As expected, using the real-time control method, the 140 μm warped wafer can also reach the steady-state temperature within 50 s, with a much better temperature uniformity than steady-state control method (Figure 9).…”
Section: ■ Thermal Modeling Of the Systemmentioning
confidence: 58%
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“…The corresponding temperature results are tabulated in Tables 2 and 3 and shown in Figure 8 as experimental run ( 5) and run (6). As expected, using the real-time control method, the 140 μm warped wafer can also reach the steady-state temperature within 50 s, with a much better temperature uniformity than steady-state control method (Figure 9).…”
Section: ■ Thermal Modeling Of the Systemmentioning
confidence: 58%
“…The most temperature sensitive step in the lithography sequence is the postexposure bake step. Requirements call for the temperature to be controlled within 0.1 °C across the wafer at temperatures between 70 and 150 °C. , A number of recent investigations also showed the importance of proper bake plate operation, both in steady-state and transient, on CD control. , Two approaches exist in addressing this issue in industry. The first approach involves the development of less temperature sensitive photoresist.…”
Section: Introductionmentioning
confidence: 99%