Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide

Ferromagnetism appears in nitrogen implanted nanocrystalline diamond films

“…Diamond, a carbon (C) based material with high band gap semiconductor [1,2], possesses many excellent characteristics for the electronic and industrial applications, such as extremely high thermal conductivity, high carrier mobility, high reflection index and high mechanical hardness. A progress in the microwave plasma enhanced chemical vapor deposition (MW PECVD) [3] was allowed to prepare polycrystalline and nanocrystalline diamond (NCD) films [4][5][6] with an excellent optical quality for possible optoelectronic applications [7][8][9].…”

First-Principles Study of Cubic BxIn1-xN Ternary Alloys

“…On the theoretical side, the binary BN, AlN, GaN, InN [2][3][4] and their solid solutions BGaN, BAlN, AlInN [4,5] were carried out using different methods in the calculation of the band structure of these alloys. These include methods based on the dielectric two-band model [6], semi-empirical tight-binding method [7,8] semi-empirical pseudo-potential method [9,10], ab initio pseudo-potential method [11][12][13][14][15][16][17][18][19][20][21][22] and full potential linearized augmented plane wave (FP-LAPW) method [23,24].…”

The Electronic and Optical Properties of Diamond; Do they Favour Device Applications?

“…The breakdown field for diamond is 10 7 V cm-1 , and the saturated electron velocity is 2.7 x 107 cm s-a; these are the highest values for a range of semiconductors considered by Davis et al [6], whereas the relative permittivity of diamond (5.7) is the lowest in their list.…”