Critical influence of target-to-substrate distance on conductive properties of LaGaO3/SrTiO3 interfaces deposited at 10−1 mbar oxygen pressure

Aruta, C.; Amoruso, S.; Ausanio, G.; Bruzzese, R.; Gennaro, Emiliano Di; Lanzano, Marco; Granozio, F. Miletto; Riaz, Muhammad Mohsin; Sambri, A.; Uccio, U. Scotti di; Wang, X.

doi:10.1063/1.4737650

Cited by 24 publications

(19 citation statements)

References 26 publications

(73 reference statements)

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“…The growth conditions (730 °C and 1 × 10 −2 mbar oxygen pressure) and the slow cooling of samples (in the same atmosphere as the growth) were chosen to minimize the formation of oxygen vacancies3435, and the Ga desorption. The oscillating intensity of the reflected high-energy electron diffraction (RHEED) pattern, recorded during the growth, allowed to control the overlayers thicknesses and to check the final surface and structural quality.…”

Section: Methodsmentioning

confidence: 99%

Universal electronic structure of polar oxide hetero-interfaces

Treske

Heming

Knupfer

et al. 2015

Sci Rep

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The electronic properties of NdGaO3/SrTiO3, LaGaO3/SrTiO3, and LaAlO3/SrTiO3 interfaces, all showing an insulator-to-metal transition as a function of the overlayer-thickness, are addressed in a comparative study based on x-ray absorption, x-ray photoemission and resonant photoemission spectroscopy. The nature of the charge carriers, their concentration and spatial distribution as well as the interface band alignments and the overall interface band diagrams are studied and quantitatively evaluated. The behavior of the three analyzed heterostructures is found to be remarkably similar. The valence band edge of all the three overlayers aligns to that of bulk SrTiO3. The near-interface SrTiO3 layer is affected, at increasing overlayer thickness, by the building-up of a confining potential. This potential bends both the valence and the conduction band downwards. The latter one crossing the Fermi energy in the proximity of the interface and determines the formation of an interfacial band offset growing as a function of thickness. Quite remarkably, but in agreement with previous reports for LaAlO3/SrTiO3, no electric field is detected inside any of the polar overlayers. The essential phenomenology emerging from our findings is discussed on the base of different alternative scenarios regarding the origin of interface carriers and their interaction with an intense photon beam.

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Section: Methodsmentioning

confidence: 99%

Universal electronic structure of polar oxide hetero-interfaces

Treske

Heming

Knupfer

et al. 2015

Sci Rep

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“…Usually, with few exceptions [40], high oxygen pressures (> 10 -3 mbar) produce insulating or barely conducting films, possibly related to a La/Al cation ratio close or larger than 1.…”

Section: The Growth Of Laalo 3 /Srtio 3 Interfacesmentioning

confidence: 99%

Electronic Reconstruction at the Interface Between Band Insulating Oxides: The LaAlO3/SrTiO3 System

Salluzzo

2015

Oxide Thin Films, Multilayers, and Nanocomposites

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The conducting quasi-two dimensional electron system (q2DES) formed at the interface between LaAlO 3 and SrTiO 3 band insulators is confronting the condensed matter physics community with new paradigms. While the mechanism for the formation of the q2DES is debated, new conducting interfaces have been discovered paving the way to possible applications in electronics, spintronics and optoelectronics. This chapter is an overview of the research on the LAO/STO system, presenting some of the most important results obtained in the last decade to clarify the mechanism of formation of the q2DES at the oxide interfaces and its peculiar electronic properties as compared to semiconducting 2D-electron gas.

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“…The first 4-5 oscillations are ill defined, particularly in the t ¼ 32 ML film, but subsequent oscillations present high amplitude. The reduction of amplitude in the first oscillations, usually observed in RHEED monitoring of heteroepitaxial growth, 5,14 is likely due to interference between electrons reflected at the film surface and at the film-substrate interface. When increasing further the thickness the oscillations become clear, indicating that YSZ grows by layer-by-layer two-dimensional mechanism on the STO(110) substrate.…”

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confidence: 99%