Critical point analysis of dielectric constant in ZnO thin films on different electronic environments

Purbayanto, Muhammad Abiyyu Kenichi; Ichwan, Rafi; Nurfani, Eka; Darma, Yudi

doi:10.1088/1742-6596/1204/1/012118

Cited by 1 publication

(1 citation statement)

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“…This is the fundamental concepts for fabricating the JFET design. For energy band analysis of the research work, the energy band-gap of zinc oxide (ZnO) and silicon dioxide (SiO2) are 3.37 eV and 8.9eV (Purbayanto et al, 2019). And the intrinsic carrier concentration of zinc oxide (ZnO) and silicon dioxide (SiO2) are 2.807 x10 -10 cm -3 and 1.075x10 -56 cm -3 , respectively [4][5][6][7].…”

Section: Band Structure Of N-zno and P-sio2 Heterojunctionmentioning

confidence: 99%

Analysis on Band Layer Design and J-V characteristics of Zinc Oxide Based Junction Field Effect Transistor

Hlaing

Nwe

2020

JLMA

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This paper presents the band gap design and J-V characteristic curve of Zinc Oxide (ZnO) based on Junction Field Effect Transistor (JFET). The physical properties for analysis of semiconductor field effect transistor play a vital role in semiconductor measurements to obtain the high-performance devices. The main objective of this research is to design and analyse the band diagram design of semiconductor materials which are used for high performance junction field effect transistor. In this paper, the fundamental theory of semiconductors, the electrical properties analysis and bandgap design of materials for junction field effect transistor are described. Firstly, the energy bandgaps are performed based on the existing mathematical equations and the required parameters depending on the specified semiconductor material. Secondly, the J-V characteristic curves of semiconductor material are discussed in this paper. In order to achieve the current-voltage characteristic for specific junction field effect transistor, numerical values of each parameter which are included in analysis are defined and then these resultant values are predicted for the performance of junction field effect transistors. The computerized analyses have also mentioned in this paper.

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Section: Band Structure Of N-zno and P-sio2 Heterojunctionmentioning

confidence: 99%