Critical spatial disorder in InGaN resonant Bragg structures

Иванов, А. А.; Chaldyshev, V. V.; Ushanov, V. I.; Заварин, Е. Е.; Сахаров, А. В.; Lundin, W. V.; Tsatsulnikov, A. F.

doi:10.1063/5.0095417

Cited by 6 publications

(1 citation statement)

References 23 publications

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“…Параметры радиационного и нерадиационного затухания в КЯ GaN составили 0.4±0.02 мэВ и 40±5 мэВ, соответственно. Отношение радиационного затухания экситона к нерадиационному в КЯ GaN/AlGaN оказалось в два раза больше, чем в КЯ InGaN/GaN [3,4].…”

Section: секцияunclassified

FORMATION OF A SUPERRADIANT EXCITON-POLARITON MODE IN A GaN/AlGaN RESONANT BRAGG STRUCTURE

Ivanov,

Chaldyshev

2023

Materials of the 26th All-Russian Youth Scientific Conference

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The given work is devoted to studying the optical properties of the sample with of 30 GaN quantum wells separated by non-tunneling AlGaN barriers. Optical reflectance was studied at different angles of incidence for different polarization of the incident light at room temperature. A model has been verified that makes it possible to describe the experimental data and determine the parameters of excitons in quantum wells. This material system seems to be most promising for implementation of the concept into devices.

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Section: секцияunclassified

FORMATION OF A SUPERRADIANT EXCITON-POLARITON MODE IN A GaN/AlGaN RESONANT BRAGG STRUCTURE

Ivanov,

Chaldyshev

2023

Materials of the 26th All-Russian Youth Scientific Conference

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Resonant optical reflection from a GaN/(Al,Ga)N excitonic Bragg structure

Ivanov,

Chaldyshev,

Zavarin

et al. 2023

Applied Physics Letters

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We experimentally demonstrate the formation of a superradiant optical mode in the room-temperature reflection spectra from a resonant Bragg structure composed of 30 equidistant GaN quantum wells separated by (Al,Ga)N barriers. The mode arises when the condition of the Bragg diffraction is fulfilled at the wavelength corresponding to the energy of the quasi-two-dimensional excitons in the quantum wells. It manifests itself as a significant increase in the amplitude and a change in the shape of the resonant optical reflection due to the electromagnetic coupling of the excitons. By modeling of the optical spectra, we evaluate the radiative and non-radiative broadening parameters of the excitonic states in the GaN quantum wells, which appear to be 0.4 ± 0.02 and 40 ± 5 meV, correspondingly, for the resonant exciton energy of 3.605 eV. The resonant Bragg structure based on the periodic sequence of the GaN quantum wells demonstrates an efficient coupling of photons and excitons at room temperature, which makes it promising for device applications.

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(In,Ga)N-GaN resonant Bragg structures with single and double quantum wells in the unit supercell

Ivanov,

Chaldyshev,

Zavarin

et al. 2024

Applied Physics Letters

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We study the formation of a superradiant optical mode in the room temperature reflection spectra from resonant Bragg structures (RBSs) composed of single and double (In,Ga)N quantum wells (QWs) in the unit cell. The appearance of the mode manifests itself by a significant increase in the resonant optical reflectivity due to the electromagnetic coupling of quasi-two-dimensional excitons in the QWs. The implementation of the supercells with double (In,Ga)N QWs results in an increase in the oscillator strength of the quasi-2D excitons and corresponding rise of the radiative broadening parameter to the value as high as 0.3 ± 0.02 meV. We also show that the supercells with double QWs are preferable for RBS with large number of periods due to better tolerance to deviations from the exact periodicity.

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Critical spatial disorder in InGaN resonant Bragg structures

Cited by 6 publications

References 23 publications

FORMATION OF A SUPERRADIANT EXCITON-POLARITON MODE IN A GaN/AlGaN RESONANT BRAGG STRUCTURE

FORMATION OF A SUPERRADIANT EXCITON-POLARITON MODE IN A GaN/AlGaN RESONANT BRAGG STRUCTURE

Resonant optical reflection from a GaN/(Al,Ga)N excitonic Bragg structure

(In,Ga)N-GaN resonant Bragg structures with single and double quantum wells in the unit supercell

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