Cross-sectional magnetic force microscopy of MnAs/GaAs(001)

Salles, B. Rache; Marangolo, M.; David, Cherine; Girard, Jean-Christophe

doi:10.1063/1.3309421

Cited by 8 publications

(7 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Although we can see sharp interfaces between MnAs and GaAs from Figure 2a,b, we cannot see evident borders between ferromagnetic α-phase and paramagnetic β-phase, indicating that the two phases are mixing together. Our results are different from observations in a 200-nm MnAs film epitaxied on GaAs (001) presented in [24], in which ferromagnetic α-phase and paramagnetic β-phase are obviously separated. We assumed this phenomenon resulted from the too thin thickness of MnAs layer.…”

Section: Resultscontrasting

confidence: 99%

Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)

Chen

et al. 2011

Nanoscale Res Lett

View full text Add to dashboard Cite

MnAs films are grown on GaAs surfaces by molecular beam epitaxy. Specular and grazing incidence X-ray diffractions are used to study the influence of different strain states of MnAs/GaAs (110) and MnAs/GaAs (001) on the first-order magnetostructural phase transition. It comes out that the first-order magnetostructural phase transition temperature Tt, at which the remnant magnetization becomes zero, is strongly affected by the strain constraint from different oriented GaAs substrates. Our results show an elevated Tt of 350 K for MnAs films grown on GaAs (110) surface, which is attributed to the effect of strain constraint from different directions.PACS: 68.35.Rh, 61.50.Ks, 81.15.Hi, 07.85.Qe

show abstract

Section: Resultscontrasting

confidence: 99%

Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)

Chen

et al. 2011

Nanoscale Res Lett

View full text Add to dashboard Cite

show abstract

“…1(b), we estimated the spatial gaps between the NCs to be approximately 20 nm. It was reported that the stray magnetic fields emanating from the MnAs thin films were intense in a relatively long range of 200 nm [58], which was much longer than the spatial gaps estimated in the current work. Therefore, the magnetic dipolar interaction between the NCs plays also possibly an important role in the magnetic reversals in our elongated NCs, in addition to the magnetic shape and the magnetocrystalline anisotropies.…”

contrasting

confidence: 53%

“…However, it might be possible that the b-MnAs is formed only in the h0À11i direction, i.e., the major-axis orientation, of the elongated NCs in the composites [56]. The magnetic dipolar interaction between MnAs nanostructures has been investigated, in particular, in the stripe structures between aand b-MnAs phases coexisted in the MnAs layers [58] and in the system with a periodical array of magnetic nanodisks [59,60]. In our MnAs NCs in the composites in Fig.…”

mentioning

confidence: 99%

Selective‐area growth and magnetic reversals of ferromagnetic nanoclusters on semiconducting substrate for magnetic logic applications

Hara

Komagata

2015

Physica Status Solidi (b)

View full text Add to dashboard Cite

The use of selective-area metal-organic vapor phase epitaxy, which is our bottom-up formation approach, to fabricate MnAs nanocluster composite arrays in which two nanoclusters are formed in close proximity at an angle of 1208 and with a spatial gap of around 20 nm on GaAs (111)B substrates is reported in this paper. The magnetic reversals of the nanoclusters in the composite arrays are observed depending on the strengths and directions of the applied external magnetic fields at room temperature. The applied external magnetic fields for the magnetic reversals in one of the nanoclusters in the composites are possibly from 750 to 1000 Gauss (G). The characterization results obtained using magnetic force microscopy show that the magnetic reversals in the nanoclusters are independently controlled in nanocluster composites. Finally, we discuss the designing of the nanocluster size, shape, and arrangement to control the magnetization directions in the nanoclusters in the composites for possible application to magnetic logic operations based on the results of the magnetic reversals in the nanoclusters.

show abstract

“…18 However, this conclusion is open to doubt: the probed area may be altered by the surface effects and consequently the measured properties will not correspond to the ones of the inner layer. Possible effects of surface and interface as well as inevitable defects on the magnetization of the film 19-21 may also not be resolved due to the spatial resolution limited to a few tens of nanometers with the MFM technique.…”

Section: Introduction Epitaxial Mnas Thin Films Onmentioning

confidence: 99%

In Depth Spatially Inhomogeneous Phase Transition in Epitaxial MnAs Film on GaAs(001)

Gatel

Serin

et al. 2017

Nano Lett.

View full text Add to dashboard Cite

Abstract. Most studies on MnAs material in its bulk form have been focused on its temperature dependent structural phase transition accompanied by a magnetic one.Magnetostructural phase transition parameters in thin MnAs films grown on GaAs substrate present however some differences from the bulk behavior, and local studies become mandatory for a deeper understanding of the mechanisms involved within the transition. Up to now, only surface techniques have been carried on, while the transition is a three dimensional phenomenon. We therefore developed an original nanometer scale methodology using electron holography to investigate the phase transition in an epitaxial MnAs thin film on GaAs(001) from the cross-section view. Using quantitative magnetic maps recorded at the nanometer scale as function of the temperature, our work provides a direct in situ observation of the inhomogeneous spatial distribution of the transition in the layer depth and brings new insights on the fundamental transition mechanisms.

show abstract

Cross-sectional magnetic force microscopy of MnAs/GaAs(001)

Cited by 8 publications

References 22 publications

Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)

Strain-induced high ferromagnetic transition temperature of MnAs epilayer grown on GaAs (110)

Selective‐area growth and magnetic reversals of ferromagnetic nanoclusters on semiconducting substrate for magnetic logic applications

In Depth Spatially Inhomogeneous Phase Transition in Epitaxial MnAs Film on GaAs(001)

Contact Info

Product

Resources

About