Cross-sectional scanning-tunneling microscopy of stacked InAs quantum dots

Eisele, H.; Flebbe, O.; Kalka, T.; Preinesberger, C.; Heinrichsdorff, F.; Krost, A.; Bimberg, D.; Dähne‐Prietsch, M.

doi:10.1063/1.124290

Cited by 106 publications

(53 citation statements)

References 15 publications

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“…Besides the importance of the structural and electronic properties of the non-polar group-III nitride surfaces for the growth of GaN-based devices and for the analysis of III-V heterostructures, e.g. by cross-sectional scanning tunneling microscopy (XSTM) [27,28], they define also a model system for other III-V wurtzite material surfaces. Although GaAs and InAs do not crystallize in the wurtzite configuration during bulk growth, semiconductor nanowires made of these materials grow partially or even fully in the wurtzite structure [29 -33].…”

Section: Review@rrlmentioning

confidence: 99%

Non‐polar group‐III nitride semiconductor surfaces

Eisele

Ebert

2012

Physica Rapid Research Ltrs

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The intrinsic structural and electronic properties of a surface are important for any further study or application of the material, especially when a high surface‐to‐volume ratio is obtained or the surface gets functionalized, as e.g. during growth. Due to increasing material quality over recent years, the first experimental results are now available for the non‐polar group‐III nitride semiconductor surface, which can be compared with previously reported theoretical calculations. While the reports on AlN and InN surfaces are still small in number, for GaN quite a lot of experimental results on the non‐polar surfaces were published on the intrinsic geometric and electronic properties, the defects, the decomposition, and the effect of impurities. Furthermore, the growth on non‐polar group‐III nitride surfaces is a new concept to reduce undesirable piezoelectric polarization in heterostructures and the side walls of wurtzite‐structured nano‐wires are formed mostly by non‐polar facets. Hence, we review the existing intrinsic structural and electronic properties of non‐polar surfaces of group‐III nitride semiconductors in this contribution.magnified imageThe three different non‐polar surfaces of III–V semiconductors with filled (bright green) and empty (bright red) dangling bonds: left (red) the (10\bar 10) surface of the wurtzite crystal structure, middle (blue) the (11\bar 20) surface of the wurtzite crystal structure, and right (green) the ({110}) surface of the zincblende structure. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Review@rrlmentioning

confidence: 99%

Non‐polar group‐III nitride semiconductor surfaces

Eisele

Ebert

2012

Physica Rapid Research Ltrs

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“…Several recent experiments [7,9,22,23] suggest that the conventional picture of Stranski-Krastanow growth may be too simple, and strong dependencies of the growth mode on growth parameters such as temperature, flux rates, and flux ratios [24][25][26] have been reported. With our method we can quantitatively determine the composition and strain profiles of free-standing quantum dots.…”

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Nanometer-Scale Resolution of Strain and Interdiffusion in Self-AssembledInAs/GaAsQuantum Dots

et al. 2000

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Tomographic nanometer-scale images of self-assembled InAs͞GaAs quantum dots have been obtained from surface-sensitive x-ray diffraction. Based on the three-dimensional intensity mapping of selected regions in reciprocal space, the method yields the shape of the dots along with the lattice parameter distribution and the vertical interdiffusion profile on a subnanometer scale. The material composition is found to vary continuously from GaAs at the base of the dot to InAs at the top.

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“…2, it can be seen that during growth the dots higher in the stack nucleate at the apex of previously buried dots, thus forming the stack. 10,11,13 The dots in the second and following layers are formed at a position that is shifted slightly with respect to the wetting layer. This is due the in-complete planarization effect of the 2D GaAs growth, which tends to flatten out rough surfaces and suppresses terrace on terrace growth.…”

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“…1͒, as it is energetically favorable to form a dot in the strain field of a previous dot to reduce the surface free energy. [10][11][12][13][14][15] It is generally assumed that this stacking process may be advantageous for high uniformity in size and shape of these dots. This is needed for improved device functionality, like low laser threshold currents, improved stability upon temperature changes, and narrow luminescence line widths.…”

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confidence: 99%