Cross-sectional sizes and emission wavelengths of regularly patterned GaN and core-shell InGaN/GaN quantum-well nanorod arrays

Liao, Che‐Hao; Chang, Wen-Ming; Yao, Yufeng; Chen, Hao-Tsung; Su, Chih‐Ying; Chen, Chih-Yen; Hsieh, Chieh; Chen, Horng-Shyang; Tu, Charng-Gan; Kiang, Yean‐Woei; Yang, Chih-Chiang; Hsu, Ta-Cheng

doi:10.1063/1.4790710

Cited by 35 publications

(51 citation statements)

References 35 publications

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“…The formation of the regularly patterned NR LED array starts with the growth of an n-GaN NR array on a triangularly patterned SiO 2 mask with a hole diameter of 350 nm and a pitch of 1200 nm, which is fabricated on an n-GaN template on c-plane sapphire substrate with nano-imprint lithography and reactive ion etching. The n-GaN NRs of ~650 nm in height are grown at 1040 °C with the pulsed growth mode of MOCVD by using 20 s in TMGa supply duration and 30 s in NH 3 supply duration [19][20][21]. A pause with the duration of 0.5 s is applied after the TMGa supply half-cycle.…”

Section: Sample Structure and Fabrication Proceduresmentioning

confidence: 99%

Regularly patterned non-polar InGaN/GaN quantum-well nanorod light-emitting diode array

Liao

Yao

et al. 2014

Opt. Express

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The growth and process of a regularly patterned nanorod (NR)- light-emitting diode (LED) array with its emission from sidewall non-polar quantum wells (QWs) are demonstrated. A pyramidal un-doped GaN structure is intentionally formed at the NR top for minimizing the current flow through this portion of the NR such that the injection current can be effectively guided to the sidewall m-plane InGaN/GaN QWs for emission excitation by a conformal transparent conductor (GaZnO). The injected current density at a given applied voltage of the NR LED device is similar to that of a planar c-plane or m-plane LED. The blue-shift trend of NR LED output spectrum with increasing injection current is caused by the non-uniform distributions of QW width and indium content along the height on a sidewall. The photoluminescence spectral shift under reversed bias confirms that the emission of the fabricated NR LED comes from non-polar QWs.

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Section: Sample Structure and Fabrication Proceduresmentioning

confidence: 99%

Regularly patterned non-polar InGaN/GaN quantum-well nanorod light-emitting diode array

Liao

Yao

et al. 2014

Opt. Express

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“…Such nanostructures can be grown with 1) a bottom-up approach using selective area epitaxy 7,8,9 or 2) using a top-down approach 10,11 in which nanowires with controlled aspect ratio are etched from a planar film before the re-growth of GaN/InGaN shell layers over the nanowires 3,11,12 . In contrast to planar layer growth, uniform InGaN growth on nanostructures is difficult because the three-dimensional (3D) growth mode leads to facet-dependent growth rates and indium nitride incorporation, leading to emission at multiple peak wavelengths 3,4,12,13, . InGaN growth on pre-etched GaN NWs has also been shown to be non-uniform for closely packed arrays 12,14 , indicating a likely dependence of indium nitride incorporation on nanorod height and spacing.…”

Section: Introductionmentioning

confidence: 99%

Investigation of facet-dependent InGaN growth for core-shell LEDs

Girgel¹,

Edwards²,

Boulbar³

et al. 2015

SPIE Proceedings

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In this work we used vertically aligned GaN nanowires with well-defined crystal facets, i.e. the {11-20} a-plane, {10-10} m-plane, (0001) c-plane and {1-101} semi-polar planes, to investigate the impact of MOVPE reactor parameters on the characteristics of an InGaN layer. The morphology and optical characteristics of the InGaN layers grown of each facet were investigated by cathodoluminescence (CL) hyperspectral imaging and scanning electron microscopy (SEM). The influence of reactor parameters on growth rate and alloy fraction were determined and compared. The study revealed that pressure can have an important impact on the incorporation of InN on the {10-10} m-plane facets. The growth performed at 750°C and 100mbar led to a homogeneous high InN fraction of 25% on the {10-10} facets of the nanowires. This work suggests homogeneous good quality GaN/InGaN core-shell structure could be grown in the near future

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“…[0001], , [11][12][13][14][15][16][17][18][19][20], and . In contrast to GaN regrowth, poor selectivity was observed during InGaN deposition, as InGaN growth can be seen on the SiN x surface in Figs.…”

Section: Characterization Of Indium Gallium Nitride Layersmentioning

confidence: 99%

“…15,18,19 In contrast to planar layer growth, uniform InGaN growth on NRs is difficult because the three-dimensional (3-D) growth mode leads to facet-dependent growth rates and indium nitride (InN) incorporation, leading to emission at multiple peak wavelengths. 4,5,17,20 Further, InGaN growth on pre-etched GaN NRs can be nonuniform for closely packed arrays, 12,21 indicating a likely dependence of indium mole fraction incorporation on NR height and spacing.…”

Section: Introductionmentioning

confidence: 99%

“…These reasons provide a strong motivation for investigating their growth by the commercially preferred metalorganic vapor phase epitaxy (MOVPE) method. Such NRs can be grown using either a bottom-up approach using selective area epitaxy [8][9][10][11][12][13][14] or a top-down approach 15,16 in which NRs with controlled aspect ratio are etched from a planar film before the regrowth of GaN/InGaN shell layers over the NRs. 4,16,17 Irrespective of their method of formation, there is substantial evidence that GaN NRs are strain-free once their height exceeds their diameter.…”

Section: Introductionmentioning

confidence: 99%

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Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core–shell light-emitting diodes

et al. 2016

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Abstract. Core-shell indium gallium nitride (InGaN)/gallium nitride (GaN) structures are attractive as light emitters due to the large nonpolar surface of rod-like cores with their longitudinal axis aligned along the c-direction. These facets do not suffer from the quantum-confined Stark effect that limits the thickness of quantum wells and efficiency in conventional light-emitting devices. Understanding InGaN growth on these submicron three-dimensional structures is important to optimize optoelectronic device performance. In this work, the influence of reactor parameters was determined and compared. GaN nanorods (NRs) with both f11-20g a-plane and f10-10g m-plane nonpolar facets were prepared to investigate the impact of metalorganic vapor phase epitaxy reactor parameters on the characteristics of a thick (38 to 85 nm) overgrown InGaN shell. The morphology and optical emission properties of the InGaN layers were investigated by scanning electron microscopy, transmission electron microscopy, and cathodoluminescence hyperspectral imaging. The study reveals that reactor pressure has an important impact on the InN mole fraction on the f10-10g m-plane facets, even at a reduced growth rate. The sample grown at 750°C and 100 mbar had an InN mole fraction of 25% on the f10-10g facets of the NRs. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Cross-sectional sizes and emission wavelengths of regularly patterned GaN and core-shell InGaN/GaN quantum-well nanorod arrays

Cited by 35 publications

References 35 publications

Regularly patterned non-polar InGaN/GaN quantum-well nanorod light-emitting diode array

Regularly patterned non-polar InGaN/GaN quantum-well nanorod light-emitting diode array

Investigation of facet-dependent InGaN growth for core-shell LEDs

Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core–shell light-emitting diodes

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