Cross-shape reconfigurable field effect transistor for flexible signal routing

Çakırlar, Çiğdem; Simon, Maik; Galderisi, Giulio; O’Connor, Ian; Mikolajick, Thomas; Trommer, Jens

doi:10.1016/j.mtelec.2023.100040

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Cited by 5 publications

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Small-Signal Characterization and Modelling of a Back Bias Reconfigurable Field Effect Transistor

Wesling,

Deng,

Chohan

et al. 2024

2024 IEEE European Solid-State Electronics Research Conference (ESSERC)

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In this work, we present the first small signal characterization of a reconfigurable field effect transistor. The device under test is a back-bias RFET integrated into an industrial 22nm FDSOI platform. These devices are particularly interesting for CMOS co-design as they enable a frequency doubling functionality using a single transistor, without the need for inductive elements. Extraction of figures of merit and a comprehensive small signal analysis are performed. It is demonstrated that an ambipolar back-bias reconfigurable field-effect transistor can be modelled using a conventional small-signal equivalent circuit. This shows promise for modelling engineers and circuit designers to explore innovative applications of this new emerging technology.

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