Crossed Andreev reflection in InSb flake Josephson junctions

Vries, Folkert K. de; Sol, Martijn; Gazibegović, Saša; Veld, Roy L. M. Op het; Balk, Stijn; Car, Diana; Bakkers, Erik P. A. M.; Kouwenhoven, Leo P.; Shen, Jie

doi:10.1103/physrevresearch.1.032031

Cited by 31 publications

(42 citation statements)

References 36 publications

(37 reference statements)

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“…For Δ y < d Au the NWs meet “head‐to‐head” and the axial growth is interrupted preventing the formation of four‐terminal crosses. [ 25,26 ] This situation is discussed in the Supporting Information (Figures ). For Δ y exceeding the final NW diameter d ( t f ), the two NWs remain separated, while for a finite off‐set d Au < Δ y < d ( t f ) the resulting structure and the possibility of forming connected four‐terminal crosses depends on the relation between Δ y , d Au , d ( t MP ), and d ( t ).…”

Section: Resultsmentioning

confidence: 99%

Multiterminal Quantized Conductance in InSb Nanocrosses

et al. 2021

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By studying the time‐dependent axial and radial growth of InSb nanowires (NWs), the conditions for the synthesis of single‐crystalline InSb nanocrosses (NCs) by molecular beam epitaxy are mapped. Low‐temperature electrical measurements of InSb NC devices with local gate control on individual terminals exhibit quantized conductance and are used to probe the spatial distribution of the conducting channels. Tuning to a situation where the NC junction is connected by few‐channel quantum point contacts in the connecting NW terminals, it is shown that transport through the junction is ballistic except close to pinch‐off. Combined with a new concept for shadow‐epitaxy of patterned superconductors on NCs, the structures reported here show promise for the realization of non‐trivial topological states in multi‐terminal Josephson junctions.

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Section: Resultsmentioning

confidence: 99%

Multiterminal Quantized Conductance in InSb Nanocrosses

et al. 2021

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“…As shown in Figure 7 c, λ e reaches values of ∼500 nm for V BG ≥ 25 V, which compares favorably with literature. 10 , 11 , 21 …”

Section: Resultsmentioning

confidence: 99%

High-Mobility Free-Standing InSb Nanoflags Grown on InP Nanowire Stems for Quantum Devices

Verma

Salimian

Zannier

et al. 2021

ACS Appl. Nano Mater.

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High-quality heteroepitaxial two-dimensional (2D) InSb layers are very difficult to realize because of the large lattice mismatch with other widespread semiconductor substrates. A way around this problem is to grow free-standing 2D InSb nanostructures on nanowire (NW) stems, thanks to the capability of NWs to efficiently relax elastic strain along the sidewalls when lattice-mismatched semiconductor systems are integrated. In this work, we optimize the morphology of free-standing 2D InSb nanoflags (NFs). In particular, robust NW stems, optimized growth parameters, and the use of reflection high-energy electron diffraction (RHEED) to precisely orient the substrate for preferential growth are implemented to increase the lateral size of the 2D InSb NFs. Transmission electron microscopy (TEM) analysis of these NFs reveals defect-free zinc blend crystal structure, stoichiometric composition, and relaxed lattice parameters. The resulting NFs are large enough to fabricate Hall-bar contacts with suitable length-to-width ratio enabling precise electrical characterization. An electron mobility of ∼29 500 cm 2 /(V s) is measured, which is the highest value reported for free-standing 2D InSb nanostructures in literature. We envision the use of 2D InSb NFs for fabrication of advanced quantum devices.

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“…In comparison with InSb/InAlSb quantum well systems, the free-standing InSb nanosheets have advantages in direct contact by metals, including superconducting materials, in easy transfer to different substrates, and in convenient fabrication of dual-gate structures. With use of free-standing InSb nanosheets, lateral quantum devices, such as planar quantum dots 31 and superconducting Josephson junctions [32][33][34] , have been successfully fabricated. A most intriguing perspective of these layered materials is to build topological superconducting structures from them, in which Majorana fermions and parafermions 35,36 can be created and manipulated, enabling a different route of developments towards topological quantum computation technology.…”

Section: Introductionmentioning

confidence: 99%

Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet

et al. 2021

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A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin–orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning of the spin–orbit interaction in the InSb nanosheet can be achieved. We also find the presence of an intrinsic spin–orbit interaction in the InSb nanosheet at zero dual-gate voltage and identify its physical origin as a build-in asymmetry in the device layer structure. Having a strong and controllable spin–orbit interaction in an InSb nanosheet could simplify the design and realization of spintronic deceives, spin-based quantum devices, and topological quantum devices.

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Crossed Andreev reflection in InSb flake Josephson junctions

Cited by 31 publications

References 36 publications

Multiterminal Quantized Conductance in InSb Nanocrosses

Multiterminal Quantized Conductance in InSb Nanocrosses

High-Mobility Free-Standing InSb Nanoflags Grown on InP Nanowire Stems for Quantum Devices

Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet

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