2000
DOI: 10.1126/science.288.5465.494
|View full text |Cite
|
Sign up to set email alerts
|

Crossed Nanotube Junctions

Abstract: Junctions consisting of two crossed single-walled carbon nanotubes were fabricated with electrical contacts at each end of each nanotube. The individual nanotubes were identified as metallic (M) or semiconducting (S), based on their two-terminal conductances; MM, MS, and SS four-terminal devices were studied. The MM and SS junctions had high conductances, on the order of 0.1 e(2)/h (where e is the electron charge and h is Planck's constant). For an MS junction, the semiconducting nanotube was depleted at the j… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

30
773
3
2

Year Published

2001
2001
2017
2017

Publication Types

Select...
9
1

Relationship

0
10

Authors

Journals

citations
Cited by 1,159 publications
(808 citation statements)
references
References 17 publications
30
773
3
2
Order By: Relevance
“…The result obtained is in broad agreement with independent experimental results [18,19]. Nonetheless, it is important to point out that in real CNT films the junction resistance can vary widely, depending on the chirality of the nanotubes involved as well as the diameter of the bundles, and an exact determination of these contact resistances is still an open problem.…”
Section: Applicationsupporting
confidence: 77%
“…The result obtained is in broad agreement with independent experimental results [18,19]. Nonetheless, it is important to point out that in real CNT films the junction resistance can vary widely, depending on the chirality of the nanotubes involved as well as the diameter of the bundles, and an exact determination of these contact resistances is still an open problem.…”
Section: Applicationsupporting
confidence: 77%
“…(1); the extracted value of E a ≈ 330 meV was found to be close to the expected range of Schottky barrier heights at junctions between individual metallic and semiconducting nanotubes, namely 190-290 meV [41]. The fractional contribution to the total conductance at 290 K from the activated term at was estimated to be 8% using the value G a ≈ 0.4 mS/sq and E a extracted from the fitting process.…”
Section: Resultsmentioning
confidence: 99%
“…It should be mentioned that this model does not distinguish between SWCNTs and MWCNTs. In addition, even though the electrical characteristics of a junction varies depending on SWCNT chirality (i.e., whether they are metallic or semiconducting) and the intersection of two different types of nanotubes to form the junction [56], R jct was assumed to be 240 kW specific to metal- Figure 4. A kinked CNT can be described by the ratio of height-to-length of CNT (i.e., height ratio or HR).…”
Section: Strain Sensing Simulationmentioning
confidence: 99%