Crossing an Interface: Ferroelectric Control of Tunnel Currents in Magnetic Complex Oxide Heterostructures

Hambe, M.; Petraru, A.; Pertsev, N. A.; Munroe, Paul; Valanoor, Nagarajan; Kohlstedt, H.

doi:10.1002/adfm.201000265

Cited by 128 publications

(114 citation statements)

References 43 publications

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“…In MFTJs, the TER and TMR effects coexist, as was first predicted by Zhuravlev et al [172]. Therefore, MFTJs represent a four-state resistance device where resistance can be switched by both electric and magnetic fields [28,173,174].…”

Section: (B) Multi-ferroic Tunnel Junctionsmentioning

confidence: 79%

Multi-ferroic and magnetoelectric materials and interfaces

Velev

Jaswal

Tsymbal

2011

Phil. Trans. R. Soc. A.

208

144

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The existence of multiple ferroic orders in the same material and the coupling between them have been known for decades. However, these phenomena have mostly remained the theoretical domain owing to the fact that in single-phase materials such couplings are rare and weak. This situation has changed dramatically recently for at least two reasons: first, advances in materials fabrication have made it possible to manufacture these materials in structures of lower dimensionality, such as thin films or wires, or in compound structures such as laminates and epitaxial-layered heterostructures. In these designed materials, new degrees of freedom are accessible in which the coupling between ferroic orders can be greatly enhanced. Second, the miniaturization trend in conventional electronics is approaching the limits beyond which the reduction of the electronic element is becoming more and more difficult. One way to continue the current trends in computer power and storage increase, without further size reduction, is to use multi-functional materials that would enable new device capabilities. Here, we review the field of multi-ferroic (MF) and magnetoelectric (ME) materials, putting the emphasis on electronic effects at ME interfaces and MF tunnel junctions.

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Section: (B) Multi-ferroic Tunnel Junctionsmentioning

confidence: 79%

Multi-ferroic and magnetoelectric materials and interfaces

Velev

Jaswal

Tsymbal

2011

Phil. Trans. R. Soc. A.

208

144

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“…The TER associated with ferroelectric polarization switching has been observed experimentally in BaTiO 3 -and PbTiO 3 -based FTJs in which either La 2/3 Sr 1/3 MnO 3 or SrRuO 3 is used as one of the electrodes while the other side of the ferroelectric thin film is in contact with the tip of an atomic force microscope [24][25][26] . The predicted simultaneous TMR and TER effects 23 have also been demonstrated experimentally in La 2/3 Sr 1/3 MnO 3 /BaTiO 3 /Fe (or Co) MFTJs [27][28][29][30][31][32][33][34] . Although the majority of the work deals with low bias, the existence of TER at finite bias has been predicted based on calculations using a semiclassical approximation 19 and first-principles 35 in FTJs, and model tight-binding calculations in MFTJs 36 .…”

Section: Introductionmentioning

confidence: 80%

Ferroelectric control of spin-transfer torque in multiferroic tunnel junctions

et al. 2015

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Based on model calculations we predict electric-field control of the spin transfer torque (STT) in magnetic tunnel junctions with ferroelectric barriers. We demonstrate that the bias dependence of the in-plane, T , and out-of-plane, T ⊥ , components of the STT can be dramatically modified by the ferroelectric polarization. In particular, the magnitude of the STT can be enhanced or suppressed by switching the polarization direction and in some cases the sign of STT can be toggled. The underlying mechanism is the combination of polarization-induced symmetry breaking and the interplay of the bias-induced and polarization-induced spin-dependent screening giving rise to a rich behavior of the electrostatic potential energy profile. These properties could lead to enhanced switching efficiency in STT-based devices and open a new avenue for applications of multiferroic devices.

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“…Nevertheless, high-quality epitaxial films grown on suitable substrates were found to possess necessary ferroelectric properties even at nanoscale thicknesses [14][15][16][17][18] , which may be attributed to the enhancement of the out-of-plane polarization by substrate-induced lattice strains 19 and the elastic stabilization of a single-domain state 20 . Based on these advancements, various FTJs have recently been successfully fabricated and the TER effect was revealed experimentally and confirmed theoretically [21][22][23][24][25][26][27][28][29][30][31] . Moreover, the functioning of solid-state memories based on FTJs has been demonstrated 3,32 and the memristive behaviour with resistance variations exceeding two orders of magnitude was observed for FTJs with the BaTiO 3 (BTO) barrier 32,33 .…”

mentioning

confidence: 99%

Giant electrode effect on tunnelling electroresistance in ferroelectric tunnel junctions

et al. 2014

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Among recently discovered ferroelectricity-related phenomena, the tunnelling electroresistance (TER) effect in ferroelectric tunnel junctions (FTJs) has been attracting rapidly increasing attention owing to the emerging possibilities of non-volatile memory, logic and neuromorphic computing applications of these quantum nanostructures. Despite recent advances in experimental and theoretical studies of FTJs, many questions concerning their electrical behaviour still remain open. In particular, the role of ferroelectric/electrode interfaces and the separation of the ferroelectric-driven TER effect from electrochemical ('redox'-based) resistance-switching effects have to be clarified. Here we report the results of a comprehensive study of epitaxial junctions comprising BaTiO 3 barrier, La 0.7 Sr 0.3 MnO 3 bottom electrode and Au or Cu top electrodes. Our results demonstrate a giant electrode effect on the TER of these asymmetric FTJs. The revealed phenomena are attributed to the microscopic interfacial effect of ferroelectric origin, which is supported by the observation of redox-based resistance switching at much higher voltages.

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Crossing an Interface: Ferroelectric Control of Tunnel Currents in Magnetic Complex Oxide Heterostructures

Cited by 128 publications

References 43 publications

Multi-ferroic and magnetoelectric materials and interfaces

Multi-ferroic and magnetoelectric materials and interfaces

Ferroelectric control of spin-transfer torque in multiferroic tunnel junctions

Giant electrode effect on tunnelling electroresistance in ferroelectric tunnel junctions

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