Crossover from Kondo-Assisted Suppression to Co-Tunneling Enhancement of Tunneling Magnetoresistance via Ferromagnetic Nanodots in MgO Tunnel Barriers

Abstract

The dependence of the tunneling magnetoresistance (TMR) of planar magnetic tunnel junctions on the size of magnetic nanodots incorporated within MgO tunnel barriers is explored. At low temperatures, in the Coulomb blockade (CB) regime, for smaller nanodots the conductance of the junction is increased at low bias consistent with Kondo assisted tunneling and the TMR is suppressed. For slightly larger nanodots but within the CB regime, the TMR is enhanced at low bias, consistent with co-tunneling.Magnetic tunnel junctions (MTJ) exhibit giant magnetoresistance in small magnetic fields which arises from the flow of spin polarized current through an ultra thin tunnel barrier separating two magnetic electrodes. The current through an MTJ device depends on the magnetic orientation of the electrodes and is typically higher when the electrode moments are parallel (P) than when they are antiparallel (AP) 1 . It has recently been demonstrated that the spin polarization of the tunneling current can be greatly enhanced by using crystalline tunnel barriers formed from MgO as compared with conventional amorphous barriers formed from alumina, due to spin filtering across the MgO layer 2-6 .The magneto-transport properties of magnetic granular alloys and magnetic tunnel junction devices with magnetic nanodots embedded in amorphous dielectric matrices 7,8 and tunnel

Kondo physics in non-local metallic spin transport devices

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Magnetic field control of hysteretic switching in Co/Al2O3 multilayers by carrier injection

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Zero-Bias Anomaly in Magnetic Tunnel Junctions

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