1994
DOI: 10.1109/15.328861
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Crosstalk between microstrip transmission lines

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Cited by 67 publications
(32 citation statements)
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“…Similar dips were also observed in the high-resistivity case [19] when m. The maximum value of coupling is around 30 dB at approximately 45 GHz and this is also in agreement with the high-case. This behavior (nonmonotonic increase) observed in the forward coupling for both highand low-silicon wafers is not similar to results presented in literature for coupled transmission lines such as microstrips [15], [21]. In this case, it is believed that the forward and backward coupling when is due to indirect coupling, as described by Schelkunoff and Odarenko [22].…”
Section: Measured Resultscontrasting
confidence: 53%
“…Similar dips were also observed in the high-resistivity case [19] when m. The maximum value of coupling is around 30 dB at approximately 45 GHz and this is also in agreement with the high-case. This behavior (nonmonotonic increase) observed in the forward coupling for both highand low-silicon wafers is not similar to results presented in literature for coupled transmission lines such as microstrips [15], [21]. In this case, it is believed that the forward and backward coupling when is due to indirect coupling, as described by Schelkunoff and Odarenko [22].…”
Section: Measured Resultscontrasting
confidence: 53%
“…Both methods are in good agreement at the lower frequencies. The decreasing amplitude of the maxima in S 13 for increasing frequency is also present in the measurement [14] but not in the momentum simulation. This is probably due to the fact that coupled ports were used in momentum.…”
Section: Numerical Resultsmentioning
confidence: 72%
“…Given a solution to this equation, the E field can be computed using Equation (3) and then the D field computed using Equation (2). At this point, all of the fields surrounding the device are known, can be visualized, and can be used to calculate the transmission line parameters.…”
Section: Governing Equationsmentioning
confidence: 99%
“…More functions can be fit into the same amount of space, products with novel form factors can be more easily manufactured, interconnect can be routed more smoothly, interfaces can be better implemented, electrical and mechanical functions can be comingled, and entirely new device paradigms will be invented. When we depart from traditional planar topologies, however, many new problems arise like signal integrity, crosstalk, noise, and unintentional coupling between devices [2][3][4][5].…”
Section: Introductionmentioning
confidence: 99%