Crosstalk Noise Reduction Techniques Using SOI Substrate

Hasani, F.; Masoumi, Nasser; Forouzandeh, Behjat

doi:10.1109/spi.2008.4558399

Cited by 4 publications

(1 citation statement)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This sensor is specifically designed to be implemented at various coordinates of a multicore microprocessor built using the GLOBALFOUNDRIES low-leakage 32-nm CMOS SOI process that offers superior substrate isolation [9], [10]. Temperature measurements are based on monitoring the reverse-bias current of a single lateral SOI p-n diode.…”

Section: Introductionmentioning

confidence: 99%

An On-Chip Temperature Sensor With a Self-Discharging Diode in 32-nm SOI CMOS

Chowdhury

Hassibi

2012

IEEE Trans. Circuits Syst. II

View full text Add to dashboard Cite

We report a 39 μm × 27 μm on-chip temperature sensor which uses the temperature-dependent reverse-bias leakage current of a lateral silicon on insulator (SOI) CMOS p-n diode to monitor the thermal profile of a 32-nm microprocessor core. In this sensor, the diode junction capacitance is first charged to a fixed voltage. Subsequently, the diode capacitance is allowed to self-discharge through its temperature-dependent reverse-bias current. Next, by using a time-to-digital-converter circuit, the discharge voltage is converted to a temperature-dependent time pulse, and finally, its width is measured by using a digital counter. This compact temperature sensor demonstrates a 3σ measurement inaccuracy of ±1.95 • C across the 5 • C-100 • C temperature range while consuming only 100 μW from a single 1.65-V supply.

show abstract

Section: Introductionmentioning

confidence: 99%