Crucial roles of holes in electronic bond rupture on semiconductor surfaces

Tsuruta, Junji; Inami, Eiichi; Kanasaki, J.; Tanimura, Katsumi

doi:10.1016/j.susc.2014.04.003

Cited by 1 publication

(1 citation statement)

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“…This change of the electron distribution might weaken the As-Ga bonds at the surface. When the tip scans above the As surface atoms, the subsequent electronic excitation of the weakened bonds might favor the desorption of the atoms through a two-hole localization mechanism, for example [62,63], leaving a vacancy behind. If an As adatom sticks to the tip apex instead of binding with other free As atoms and desorbing as molecules, it could be further released during the next scans to replace a vacancy, giving rise to the switching behavior observed in Fig.…”

Section: Charge States Of the Antisitementioning

confidence: 99%

Chemical nature of the anion antisite in dilute phosphide GaAs1−xPx alloy grown at low temperature

Demonchaux

Sossoe

Dzagli

et al. 2018

Phys. Rev. Materials

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While nonstoichiometric binary III-V compounds are known to contain group-V antisites, the growth of ternary alloys consisting of two group-V elements might give additional degrees of freedom in the chemical nature of these antisites. Using cross-sectional scanning tunneling microscopy (STM), we investigate lowtemperature-grown dilute GaAs 1−x P x alloys. High concentrations of negatively charged point defects are found. Combined with transmission electron microscopy and pump-probe transient reflectivity, this study shows that the defects have a behavior similar to the group-V antisites. Further analyses with x-ray diffraction point to the preferential incorporation of arsenic antisites, consistent with ab initio calculations, that yield a formation energy 0.83 eV lower than for phosphorus antisites. Although the negative charge carried by the arsenic antisites in the STM images is shown to be induced by the proximity of the STM tip, the arsenic antisites are not randomly distributed in the alloy, providing insight into the evolution of their charge state during the growth.

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Section: Charge States Of the Antisitementioning

confidence: 99%