Crying Wulff on vapor–solid distributions of crystallogen chemical vapor deposition via p-block element hydride thermal decomposition

Tomasini, P.

doi:10.1016/j.jcrysgro.2023.127114

Cited by 2 publications

(12 citation statements)

References 163 publications

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“…GR(hkl) aligns well with surface energy ratio when experiments are properly conducted,. 17 Destefanis has noticed a near identity between GR(110)/GR(100) = 0.74 and the corresponding dangling bond ratio of 0.71,. 150 Hartmann has compared epitactic Ge(hkl) GR between 400 °C and 700 °C, Table I,.…”

Section: Resultsmentioning

confidence: 97%

“…Across crystallogen, there is also scattered evidence for other fractional values such as ⅓ and ⅕, when growth is carried out via an oligomeric precursor,. 17 The Arrhenius plot for silicon deposition via silane shows two typical sections, Fig. 4.…”

Section: Resultsmentioning

confidence: 99%

“…But mutatis mutandis, the chemistry is shared by most crystallogen,. 17 The chemical reaction is a plain reduction of silane into silicon with molecular hydrogen as byproduct, Eq. 1,.…”

Section: Methodsmentioning

confidence: 99%

“…By contrast, a simpler operational picture emerges when a keen discernment is exercised on the available evidence,. [16][17][18][19][20][21] Three interconnected factors are considered: molecular hydrogen dissociative adsorption, precursor Thermal Decomposition (TD), and CVD-EC growth rates. Then, an intuitive perception of underlying mechanisms emerges.…”

Section: List Of Acronyms {Hkl}mentioning

confidence: 99%

“…154,155 And recently a few tweaks unleashed thermodynamics full potential on crystallogens,. 17 Carrier gas contribution is ignored, and species enthalpy of formation is not used in this report,. 18 CVD is carried out at constant pressure, but TD is usually carried out at constant volume.…”

Section: Theorymentioning

confidence: 99%

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Chemical Vapor Deposition of Elemental Crystallogen Thin Films

Tomasini

2024

ECS J. Solid State Sci. Technol.

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A consolidation of the fundamentals of elemental crystallogen chemical vapor deposition (CVD) is a necessity in view of the extensive evidence accumulated over the last few decades. An in-depth understanding of deposition mechanisms via hydrides asks for a discerning understanding of molecular hydrogen dissociative adsorption, precursor thermal decomposition, and CVD growth rates. With those, a groundbreaking paradigm shift comes to light. GR activation energy E(GR) fingerprints the surface energy. SE ≈ 2E(GR) / (aa), where SE is surface energy, E(GR) activation energy, a lattice parameter. Hydride precursor thermal decomposition consistency with the corresponding solid growth kinetics is demonstrated. Heterogeneous TD kinetics captures a solid deposition and not a gas phase molecular reaction. Thermodynamic equilibrium is achieved during the heterogeneous thermal decomposition of silicon precursors. The popular split between mass-transfer and kinetic regimes is not supported by evidence. Three mechanisms are apparent. The first is controlled by a Si–H bond dissociation energy. The second is controlled by an H–H bond dissociation energy. The last is controlled by a Si–Si bond dissociation energy as lattice sites are sealed off with Si–H bonds.

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Section: Resultsmentioning

confidence: 97%

Section: Resultsmentioning

confidence: 99%

“…But mutatis mutandis, the chemistry is shared by most crystallogen,. 17 The chemical reaction is a plain reduction of silane into silicon with molecular hydrogen as byproduct, Eq. 1,.…”

Section: Methodsmentioning

confidence: 99%