Cryogenic Endurance of Anti-ferroelectric and Ferroelectric $\text{Hf}_{1-\mathrm{x}}\text{Zr}_{\mathrm{X}}\mathrm{O}_{2}$ for Quantum Computing Applications

Lee, J.-Y.; Lou, Z.-F.; Hsiang, K.-Y.; Li, Z.-X.; C, Liu; Hou, Tuo‐Hung; Su, Pin; Lee, Min-Hung

doi:10.1109/irps48203.2023.10118311

Cited by 2 publications

(1 citation statement)

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“…As shown in Fig. 3(d), the averaged E c monotonically increases as the temperature decreases, suggesting a higher barrier for ferroelectric switching at lower temperatures [20] . In particular, under 3.0 MV/cm, the averaged E c increases from 1.1 MV/cm (@ 300 K) to 1.4 MV/cm (@ 30 K) as the temperature decreases.…”

Section: Resultsmentioning

confidence: 73%

Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf_0.5Zr_0.5O₂ thin films by thermal atomic layer deposition

Wu,

Cao,

Jiang

et al. 2024

J. Semicond.

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The performance and reliability of ferroelectric thin films at temperatures around a few Kelvin are critical for their application in cryo-electronics. In this work, TiN/Hf0.5Zr0.5O2/TiN capacitors that are free from the wake-up effect are investigated systematically from room temperature (300 K) to cryogenic temperature (30 K). We observe a consistent decrease in permittivity (ε r) and a progressive increase in coercive electric field (E c) as temperatures decrease. Our investigation reveals exceptional stability in the double remnant polarization (2P r) of our ferroelectric thin films across a wide temperature range. Specifically, at 30 K, a 2P r of 36 µC/cm2 under an applied electric field of 3.0 MV/cm is achieved. Moreover, we observed a reduced fatigue effect at 30 K in comparison to 300 K. The stable ferroelectric properties and endurance characteristics demonstrate the feasibility of utilizing HfO2 based ferroelectric thin films for cryo-electronics applications.

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Section: Resultsmentioning

confidence: 73%

Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf_0.5Zr_0.5O₂ thin films by thermal atomic layer deposition

Wu,

Cao,

Jiang

et al. 2024

J. Semicond.

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Cryogenic Ferroelectricity of HZO Capacitors on a III–V Semiconductor

Karthik Ram,

Dahlberg,

Wernersson

2024

IEEE Electron Device Lett.

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Cryogenic Endurance of Anti-ferroelectric and Ferroelectric $\text{Hf}_{1-\mathrm{x}}\text{Zr}_{\mathrm{X}}\mathrm{O}_{2}$ for Quantum Computing Applications

Cited by 2 publications

References 11 publications

Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf_0.5Zr_0.5O₂ thin films by thermal atomic layer deposition

Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf_0.5Zr_0.5O₂ thin films by thermal atomic layer deposition

Cryogenic Ferroelectricity of HZO Capacitors on a III–V Semiconductor

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Cryogenic Endurance of Anti-ferroelectric and Ferroelectric $\text{Hf}_{1-\mathrm{x}}\text{Zr}_{\mathrm{X}}\mathrm{O}_{2}$ for Quantum Computing Applications

Cited by 2 publications

References 11 publications

Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf0.5Zr0.5O2 thin films by thermal atomic layer deposition

Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf0.5Zr0.5O2 thin films by thermal atomic layer deposition

Cryogenic Ferroelectricity of HZO Capacitors on a III–V Semiconductor

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Product

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Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf_0.5Zr_0.5O₂ thin films by thermal atomic layer deposition

Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf_0.5Zr_0.5O₂ thin films by thermal atomic layer deposition