2005
DOI: 10.1142/s0219477505002859
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Cryogenic Hemt Noise Modeling by Artificial Neural Networks

Abstract: In this paper we report the development of an artificial neural network to extract a 17-element smallsignal circuit model of high electron mobility transistors (HEMTs) and one associated noise temperature value. By this procedure, we are able to reproduce the small-signal and noise performance of several device types from only one measured scattering parameter set, one frequency point and one noise figure value. The employed noise figure is measured in input matched conditions (i.e. 50 Ω source impedance), nam… Show more

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Cited by 14 publications
(5 citation statements)
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“…This kind of approach overcomes the difficulties of extracting the values of circuit and noise elements which vary according the device type, bias conditions and temperature. Therefore, application of ANN procedures represents an interesting modeling tool but the accessible generalization features strongly depend on the amount and the choice of data employed in the training phase [8,9].…”
Section: Noise Parameters In Microwave Devicesmentioning
confidence: 99%
See 1 more Smart Citation
“…This kind of approach overcomes the difficulties of extracting the values of circuit and noise elements which vary according the device type, bias conditions and temperature. Therefore, application of ANN procedures represents an interesting modeling tool but the accessible generalization features strongly depend on the amount and the choice of data employed in the training phase [8,9].…”
Section: Noise Parameters In Microwave Devicesmentioning
confidence: 99%
“…This approach is original and very flexible because it does not require a training procedure like in the Artificial Neural Networks (ANNs) -based systems [8,9]. It also allows to perform an analysis of the stability performances of the parameters under test.…”
Section: Implementation Of the Evolution Algorithmmentioning
confidence: 99%
“…Moreover, ANNs have been recently adopted as an interesting modeling tool for the active device characterization in the microwave frequency range. Our most recent works in this field have been focused upon GaAs lattice-matched and pseudomorphic HEMT's previously characterized in our laboratory [5,9]. By implementing these procedures, we have been able to reproduce the small-signal circuit model and noise parameters of several device types from only one measured scattering parameter set, one frequency point and one noise figure value.…”
Section: Artificial Neural Network Modelingmentioning
confidence: 99%
“…It combines the new instrumentation and the engineering knowledge with chemistry and medicine, and it is the attainment of a diagnostic monitoring for human diseases [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26].…”
Section: Introductionmentioning
confidence: 99%