Cryogenic Temperature Characterization of a 28-nm FD-SOI Dedicated Structure for Advanced CMOS and Quantum Technologies Co-Integration

Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect Transistors

“…Additionally, this approach has led to unreasonably high N it at deep-cryogenic temperatures in the literature. 8,16,18,19 Typical N it values that have been extracted in this way are in the order of 10 13 − 10 14 cm −2 at 4.2 K, and 10 16 cm −2 at 20 mK. 8 The values at 4.2 K are still possible in principle.…”

“…8,16,18,19 Typical N it values that have been extracted in this way are in the order of 10 13 − 10 14 cm −2 at 4.2 K, and 10 16 cm −2 at 20 mK. 8 The values at 4.2 K are still possible in principle. The values at 20 mK, however, exceed the number of atomic lattice sites at a silicon surface (≈ 7 × 10 14 cm −2 ), highlighting the incompleteness of the underlying theory.…”

“…8 As shown in Fig. 1, this degradation is measured in structurally different FETs, operating in subthreshold at both low and high drain-to-source voltage, V DS , and among various technology nodes: mature and advanced bulk and FDSOI MOSFETs, [4][5][6][7][8][9][10][11][12][13][14] FinFETs, 15,16 gate-all-around Si nanowires, 17 junctionless nanowires, 18,19 SiGe FETs, 20 InP HEMTs, 21 SiC FETs, 22 to name a few. Fig.…”

A Review on Quantum Computing: From Qubits to Front-end Electronics and Cryogenic MOSFET Physics

“…It is then clear that the trend of the measured SS starts to roll off from the linear Boltzmann limit below ≈ 50 K. This gives around 4.2 K typically a ∆SS ≈ 10 mV/decade higher than the Boltzmann limit (SS ≈ 1 mV/decade). This behavior continues down to temperatures as low as tens of millikelvin [73], [77] Such high SS can only be explained with the Boltzmann theory when anomalously high densities are used for the interface traps [77]. This highlights that some physical phenomenon is lacking to explain ∆SS.…”

A sparse spin qubit array with integrated control electronics

“…Semiconductor spin qubits [1,2] are an attractive platform for large-scale quantum computers, due to their potential compatibility with well-established semiconductor manufacturing processes. In the last decade we have witnessed tremendous progress in the development of spin-qubit hardware [3][4][5][6][7][8] and significant interest and contribution of the semiconductor industry into spin-qubit research [9][10][11].…”