Cryogenic thermometry: a review of recent progress

Rubin, Lawrence G.

doi:10.1016/s0011-2275(70)80004-2

Cited by 61 publications

(7 citation statements)

References 168 publications

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“…There are two types of thermometer has been developed, named 1,100-type and 1,200-type. First one has a monotonic behavior of capacitance with temperatures from 0.11 to 70 K. Second type of thermometer is operated from 0.05 to 10 K [75].…”

Section: Strontium Titanate Glass Ceramicsmentioning

confidence: 99%

Dielectric behavior of perovskite glass ceramics

Yadav

Gautam

2014

J Mater Sci: Mater Electron

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The recent developments of energy storage devices are concerned with larger energy storage ability, low loss and good temperature stability. It has a great technological importance in engineering science. The dielectric materials like ceramics and glass ceramics have great interest in electronic ceramic industry due to above concern. The ceramic dielectrics are used as a capacitive element in electronic circuits. The perovskite glass ceramics have very high dielectric constant and low dielectric loss. The high dielectric constant in glass ceramics is attributed to space charge polarization. In order to produce glass ceramics of high dielectric constant, barium titanate glass ceramics is the first discovered ferroelectric perovskite. In this review article, we are summarizing the dielectric behavior of perovskite glass ceramics such as

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Section: Strontium Titanate Glass Ceramicsmentioning

confidence: 99%

Dielectric behavior of perovskite glass ceramics

Yadav

Gautam

2014

J Mater Sci: Mater Electron

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“…All three types are commercially available and were developed to minimize high magnetic field effects on the thermometers. [72][73][74][75][76] …”

Section: Platinum Resistance Thermometersmentioning

confidence: 99%

Review of temperature measurement

Childs

Greenwood

Long

2000

Review of Scientific Instruments

795

442

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“…This technique has been widely used in diode based thermometers for several decades. Thermometers using the junction voltage of a diode can measure temperature in the range of 1 K-400 K with a precision of 1 mK [7,8,9]. Measurement of the junction temperature of quantum-dot and GaN based laser diodes have been also reported in the literature [10,11] .…”

Section: Introductionmentioning

confidence: 99%

Wavelength stabilisation of a DFB laser diode using measurement of junction voltage

et al. 2014

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Laser diode wavelength stability is vital for applications such as spectroscopy and data communication, and the emitted wavelength is a function of temperature. In a conventional system, the laser diode temperature is controlled using a Peltier element with a temperature-sensing thermistor, the latter placed at a short distance from the laser diode chip. Despite the use of good thermal design and a case, a change in ambient temperature may cause a change to internal thermal gradients, resulting in a systematic error in the laser diode wavelength. In this paper we describe a novel system to measure the temperature of the laser diode junction via measurement of the junction voltage. The method has been applied to a 1651 nm DFB laser diode for use in tunable diode laser spectroscopy (TDLS) of methane. The wavelength stability of both thermistor-and voltage-control systems are compared over a period of 30 minutes and with different ambient temperatures. Over 30 min at constant ambient temperature, thermistor control provided a precision of ± 0.4 pm (40 MHz) and junction voltage control gave a similar ± 0.6 pm (70 MHz). For an ambient temperature change of 20°C, conventional thermistor control suffered a wavelength change of 76 pm (8.4 GHz), whereas junction voltage control reduced this to 0.6 pm (70 MHz), at or below the level of long-term wavelength precision.

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Cryogenic thermometry: a review of recent progress

Cited by 61 publications

References 168 publications

Dielectric behavior of perovskite glass ceramics

Dielectric behavior of perovskite glass ceramics

Review of temperature measurement

Wavelength stabilisation of a DFB laser diode using measurement of junction voltage

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