Cryogenic threshold voltage and on-current variability comparative analysis of same-fab 65 nm bulk and fully depleted silicon-on-insulator metal–oxide–semiconductor field-effect transistors

Abstract

In this study, the current and threshold voltage variability for FDSOI and bulk FETs that are prepared at the same fab using same process is analyzed and compared at cryogenic temperature (CT) and room temperatures (RT). It is found that FDSOI shows more variability at CT, especially in linear region. However, FDSOI still has smaller variability as compared bulk FETs, including smaller DIBL value. It is also found that the limited Random Dopant Fluctuation (RDF) in FDSOI makes the impact from other variability sources more obvious, while the variability in bulk is more shadowed by RDF. The origin for such phenomena is discussed.