2020 IEEE/MTT-S International Microwave Symposium (IMS) 2020
DOI: 10.1109/ims30576.2020.9223922
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Cryogenic W-Band SiGe BiCMOS Low-Noise Amplifier

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Cited by 11 publications
(3 citation statements)
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“…Detection is typically done using shotnoise-limited balanced pulsed homodyne detectors 41 whose operation speed and stability can greatly benefit from PIC integration and dedicated electronics. 132 We, therefore, plan to exploit fast Ge PDs in combination with our in-house expertise in ultrafast electronics 133,134 to develop balanced photodetectors with a speed above 50 GHz. We stress that even though the speed of our present Ge PDs is limited to about 40 GHz, suitably designed Ge PDs with smaller volumes have been recently demonstrated to reach up to 265 GHz.…”
Section: Cv-qkdmentioning
confidence: 99%
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“…Detection is typically done using shotnoise-limited balanced pulsed homodyne detectors 41 whose operation speed and stability can greatly benefit from PIC integration and dedicated electronics. 132 We, therefore, plan to exploit fast Ge PDs in combination with our in-house expertise in ultrafast electronics 133,134 to develop balanced photodetectors with a speed above 50 GHz. We stress that even though the speed of our present Ge PDs is limited to about 40 GHz, suitably designed Ge PDs with smaller volumes have been recently demonstrated to reach up to 265 GHz.…”
Section: Cv-qkdmentioning
confidence: 99%
“…We, therefore, plan to exploit fast Ge PDs in combination with our in-house expertise in ultrafast electronics 133 , 134 to develop balanced photodetectors with a speed above 50 GHz. We stress that even though the speed of our present Ge PDs is limited to about 40 GHz, suitably designed Ge PDs with smaller volumes have been recently demonstrated to reach up to 265 GHz 135 .…”
Section: Qkd Receiversmentioning
confidence: 99%
“…Cryogenic LNAs are essential and often indispensable for branches of science like astronomy [20]. Typically, two types of transistors are utilized in cryogenic LNAs: High Electron Mobility Transistor (HEMT) [19][20][21] and Silicon-Germanium Heterojunction Bipolar Transistor [20,21]. Notably, HEMT technology remains unaffected by freeze-out at cryogenic temperatures [16][17][18][19].…”
Section: Introductionmentioning
confidence: 99%