Crypto primitive of MOCVD MoS2 transistors for highly secured physical unclonable functions

Shao, Bangjie; Choy, Tsz Hin; Zhou, Feichi; Chen, Jiewei; Park, Yong Ju; Ahn, Juhyeon; Chai, Yang

doi:10.1007/s12274-020-3033-0

Cited by 23 publications

(31 citation statements)

References 25 publications

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“…Historically, an optical PUF was first demonstrated by using speckle patterns from aggregated microparticles long before the term PUF was coined . Several advanced nanomaterial-based PUFs have recently been proposed, including nanoelectronics and photonics approaches in addition to conventional electronic PUFs. − In particular, numerous non-silicon materials have received considerable attention, including carbon nanotubes (CNT), − two-dimensional transition metal dichalcogenides (TMDs), − plasmonic nanomaterials, − lanthanide-doped nanoparticles, ,, nano-electromechanical materials, random lasing materials, , and biomaterials. − …”

Section: Introductionmentioning

confidence: 99%

Disordered Heteronanostructures of MoS₂ and TiO₂ for Unclonable Cryptographic Primitives

Park

Leem

et al. 2021

ACS Appl. Nano Mater.

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In the era of hyperconnected contemporary society, hardware and information security become more dependent on advanced cryptographic primitives. A physically unclonable function (PUF), originally implemented by an algorithmic means as software-based security, is considered as an immediate security solution. Nanomaterial-based PUFs have recently received considerable attention but have often limitations on unclonability and scalability for practical applications. Here, we report that heteronanostructures of vertically orientated molybdenum disulfide (MoS 2 ) nanoflakes and titanium dioxide (TiO 2 ) aggregates can be used for a versatile PUF. The band alignment of heteronanostructured MoS 2 /TiO 2 results in photogenerated electron transfer and turns off the bright state of emitters, offering an entropy source. After von Neumann debiasing, extracted cryptographic keys show a large encoding capacity and reliable PUF performance, including randomness, uniqueness, reproducibility, low false rates, and long-term stability. The unique hybridization of the most common semiconductor nanomaterials could not only offer inherent asymmetry not to be cloned for a PUF but also guarantee scalable nanomanufacturing strategies to augment cryptosystems.

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Section: Introductionmentioning

confidence: 99%

Disordered Heteronanostructures of MoS₂ and TiO₂ for Unclonable Cryptographic Primitives

Park

Leem

et al. 2021

ACS Appl. Nano Mater.

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“…Other approaches like oxide breakdown induced current fluctuations, random telegraph noise, and numerous spatiotemporal phenomena at the deep-micrometer and nanometer scale have also been used as high entropy sources. − Although sufficiently random, most state-of-the-art TRNGs often require postprocessing steps such as von Neumann correction to remove any residual biases. − Recently, diffusive memristor-based TRNGs − were proposed that required no additional postprocessing steps while providing attractive properties such as low power consumption. Nanoscale materials and devices have also been explored as postsilicon alternatives for generating true random numbers (TRNs). − In addition, several optical, − quantum, − and biological − TRNGs have been proposed. While these developments are impressive, vulnerability of TRNGs to machine learning (ML) attacks is relatively less studied.…”

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confidence: 99%

A Machine Learning Attack Resilient True Random Number Generator Based on Stochastic Programming of Atomically Thin Transistors

2021

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A true random number generator (TRNG) is a critical hardware component that has become increasingly important in the era of Internet of Things (IoT) and mobile computing for ensuring secure communication and authentication schemes. While recent years have seen an upsurge in TRNGs based on nanoscale materials and devices, their resilience against machine learning (ML) attacks remains unexamined. In this article, we demonstrate a ML attack resilient, low-power, and low-cost TRNG by exploiting stochastic programmability of floating gate (FG) field effect transistors (FETs) with atomically thin channel materials. The origin of stochasticity is attributed to the probabilistic nature of charge trapping and detrapping phenomena in the FG. Our TRNG also satisfies other requirements, which include high entropy, uniformity, uniqueness, and unclonability. Furthermore, the generated bit-streams pass NIST randomness tests without any postprocessing. Our findings are important in the context of hardware security for resource constrained IoT edge devices, which are becoming increasingly vulnerable to ML attacks.

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“…This means that every capacitor may possess 4 different values: "00", "01", "10", "11". Other groups that show 2-bit systems only have 3 different values [18,19]. To determine the 2-bit key, 3 decision values are needed.…”

Section: B 2-bit Per Capacitor Keymentioning

confidence: 99%

Fabrication and Characterization of 2-Bit per Capacitor as Functional Structures for Physical Unclonable Function Circuits

Biba

Boche

Gossner

et al. 2022

IEEE J. Electron Devices Soc.

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Currently, security issues for semiconductor chips are counterfeiting and night shift problems. These factors might lead to insecure supply chains in the automotive industry. This can be avoided by using coating Physical Unclonable Functions (PUFs). The coating can be applied to every semiconductor chip in order to create a unique fingerprint. In this work, a 2-bit key per capacitor for Physical Unclonable Functions is presented for the first time. For this reason, 49 chips on a wafer with 195 metal oxide semiconductor (MOS) capacitors were fabricated. A large and random fluctuation of the capacitances was achieved by using a self-developed layer, which consisted of aluminum particles and spin-on glass. Due to the random variation in size and change in distribution of the particles, the fluctuation of capacitance varied from chip to chip and from wafer to wafer. The achieved large range in capacitance was used to create a 390-bit string out of 195 capacitors. Although the length of the bit string was doubled, the area of the structure remained constant. This led to a more secure PUF with a low error rate of 0.21 % and an inter-chip Hamming distance (HDinter) of 49 %.

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Crypto primitive of MOCVD MoS2 transistors for highly secured physical unclonable functions

Cited by 23 publications

References 25 publications

Disordered Heteronanostructures of MoS₂ and TiO₂ for Unclonable Cryptographic Primitives

Disordered Heteronanostructures of MoS₂ and TiO₂ for Unclonable Cryptographic Primitives

A Machine Learning Attack Resilient True Random Number Generator Based on Stochastic Programming of Atomically Thin Transistors

Fabrication and Characterization of 2-Bit per Capacitor as Functional Structures for Physical Unclonable Function Circuits

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Crypto primitive of MOCVD MoS2 transistors for highly secured physical unclonable functions

Cited by 23 publications

References 25 publications

Disordered Heteronanostructures of MoS2 and TiO2 for Unclonable Cryptographic Primitives

Disordered Heteronanostructures of MoS2 and TiO2 for Unclonable Cryptographic Primitives

A Machine Learning Attack Resilient True Random Number Generator Based on Stochastic Programming of Atomically Thin Transistors

Fabrication and Characterization of 2-Bit per Capacitor as Functional Structures for Physical Unclonable Function Circuits

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Disordered Heteronanostructures of MoS₂ and TiO₂ for Unclonable Cryptographic Primitives

Disordered Heteronanostructures of MoS₂ and TiO₂ for Unclonable Cryptographic Primitives