Crystal-chemical aspect of formation of CdAs2-ZnAs2 solid solutions

Abstract

Thin AgIn 5 S 8 films are grown on glass substrates by pulsed laser deposition using bulk crystals as targets, and their structure, chemical composition, surface morphology, and optical properties (transmission and reflection spectra in the range 0.5-2.5 µ m) are investigated. The transmission and reflection data are used to evaluate the absorption coefficient of the films and the energies of direct and indirect interband transitions. The results obtained for laser-deposited AgIn 5 S 8 films agree well with those for bulk crystals.

Surface analysis of InP and InGaAs after low temperature diffusion of Zinc

“…Because of the reduced driving force, it is conceivable that the kinetics of the eventual Zn 3 As 2 formation by reaction of Zn and InGaAs is rather slow, with a time constant larger than that required for Zn diffusion into the III-V film (which itself also contributes to consuming the Zn species necessary for Zn 3 As 2 formation). As a last indication of the consistency of the proposed explanation to distinguish between InP and InGaAs, it is interesting to note that when Cd is used as the p-type dopant (instead of Zn) rather good junctions can be formed in InP [6], consistently with the small standard enthalpy of formation of CdP 2 of −55 kJ/mol [14]. Complementary studies are needed in order to stabilize InP during diffusion.…”