2023
DOI: 10.1016/j.actamat.2023.118904
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Crystal distortions and structural defects at several scales generated during the growth of silicon contaminated with carbon

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Cited by 3 publications
(1 citation statement)
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“…Ouaddah et al [24]proposed a model for the presence of silicon carbide precipitates at the solid-liquid interface during silicon-based solidification processes . Bornside et al explored the formation mechanism of silicon-carbon impurities in the system by simulating the convection and diffusion of SiO and CO in the furnace during the production of monocrystalline silicon by the straight drawing process(CZ).…”
Section: Introductionmentioning
confidence: 99%
“…Ouaddah et al [24]proposed a model for the presence of silicon carbide precipitates at the solid-liquid interface during silicon-based solidification processes . Bornside et al explored the formation mechanism of silicon-carbon impurities in the system by simulating the convection and diffusion of SiO and CO in the furnace during the production of monocrystalline silicon by the straight drawing process(CZ).…”
Section: Introductionmentioning
confidence: 99%