Crystal facet-dependent reactivity of α-Mn2O3 microcrystalline catalyst for soot combustion

Cheng, Li; Men, Yongfeng; Wang, Jinguo; Wang, Hao; An, Wei; Wang, Yuanqiang; Duan, Zhichen; Liu, Jian

doi:10.1016/j.apcatb.2016.11.041

Cited by 154 publications

(79 citation statements)

References 59 publications

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“…Based on the average value obtained by performing repeated XPS measurements on several specimens, the MnO phase was found to be predominant (81.5%) and was accompanied by smaller contributions of MnOOH (12.0%) and Mn 2 O 3 (6.5%), producing unique characteristics. It should be noted that MnO QDs are passivated by hydroxyl group (OH), as confirmed by Fourier transform infrared spectroscopy (FTIR) findings shown in Figure S2 in the Supporting Information . The doublet peaks shown in the high‐resolution XPS spectrum of the Mn 3 s (Figure b) are typically examined to confirm the Mn oxidation state.…”

mentioning

confidence: 74%

Novel P‐Type Wide Bandgap Manganese Oxide Quantum Dots Operating at Deep UV Range for Optoelectronic Devices

Mitra

Pak

Alaal

et al. 2019

Advanced Optical Materials

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in a wide range of industrial applications, such as homeland security, medical diagnostics, food curing, sanitation, chemical and biological threat detection, space-tospace communications, missile detection, military surveillance, target detection and acquisition, transparent thin-film transistors, solar cells, white lighting, sterilization, medical treatment, and touch display panels. [1][2][3][4][5][6][7] For example, the most commercial DUV photodetectors are produced using UV-enhanced narrow bandgap semiconductors, mainly Si-based photodetector. [8,9] However, the narrow bandgap materials are ineffective in rejecting signals in the UV−vis−IR spectral region, making them unsuitable for DUV applications. Thus, high-quality DUV WBGSs are still needed to produce high-performance DUV optoelectronic devices. In each of the aforementioned fields, scientists and industry practitioners are looking to overcome different challenges. There is a growing demand for both p-type and n-type WBGSs that possess good stability and conductivity. The main obstacle to the achievement of this goal stems from the lack of p-type wide bandgap materials operating in the DUV range below 300 nm (i.e., >4.1 eV) that exhibit good p-type stability. Currently, the p-type materials having bandgap in the UV-A range (such as p-type GaN, Cu 2 O, and SnO) are utilized in DUV optoelectronics, which severely downgrade device performance, as their bandgaps are limited to the UV-A-to-visible spectral region (320-400 nm). [10,11] Moreover, though n-type WBGSs (e.g., ZnO, Ga 2 O 3 , and AlGaN) with good conductivity and stability can operate in the UV and DUV range (280−390 nm), it is not possible to convert them to a p-type material with good stability and conductivity due to their intrinsic electronic properties. [2,6,[11][12][13][14][15][16] Consequently, no highly stable conductive p-type DUV WBGS operating in both UV-B and UV-C region presently exists. [17] Further advances in the field of DUV optoelectronics are hindered by other issues, such as the difficulty in developing new cost-effective material production and fabrication methods that could replace the expensive and high vacuum-based technologies presently in use. Thus, as DUV-WBGS based devices tend Wide bandgap semiconductor (WBGS)-based deep UV (DUV) devices lag behind those operating in the visible and IR range, as no stable p-type WBGS that operates in the DUV region (<300 nm) presently exists. Here, solutionprocessed p-type manganese oxide WBGS quantum dots (MnO QDs) are explored. Highly crystalline MnO QDs are synthesized via femtosecond-laser ablation in liquid. The p-type nature of these QDs is demonstrated by Kelvin probe and field effect transistor measurements, along with density functional theory calculations. As proof of concept, a high-performance, self-powered, and solar-blind Schottky DUV photodetector based on such QDs is fabricated, which is capable of detecting under ambient conditions. The carrier collection efficiency is enhanced by asymmetric electrode structure, leadi...

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confidence: 74%

Novel P‐Type Wide Bandgap Manganese Oxide Quantum Dots Operating at Deep UV Range for Optoelectronic Devices

Mitra

Pak

Alaal

et al. 2019

Advanced Optical Materials

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“…In Figure 1a, pure Mn 2 O 3 and M‐doped Mn 2 O 3 samples exhibited the characteristic peaks of cubic structured Mn 2 O 3 indexed as (211), (222), (400), (332), (431), and (440) planes according to the Joint Committee on Powder Diffraction Standards Card Number 41‐1442 . The absence of respective oxides CoO x , CuO x , and NiO or any other impurities in the samples confirms the formation of respective solid solutions Mn 1.9 M 0.1 O 3– δ (M = Co, Cu, and Ni).…”

Section: Resultsmentioning

confidence: 77%

Enhancement of soot oxidation activity of manganese oxide (Mn₂O₃) through doping by the formation of Mn_1.9M_0.1O_3–δ (M = Co, Cu, and Ni)

Neelapala

Patnaik

Dasari

2018

Asia-Pacific J Chem Eng

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The current work describes the catalytic soot oxidation activity of metal‐doped manganese oxide (Mn1.9M0.1O3–δ; M = Co, Cu, and Ni) materials, synthesized by coprecipitation method. All the fabricated materials were characterized using X‐ray diffraction (XRD), field emission scanning electron microscopy (FESEM), Brunauer–Emmett–Teller surface area analysis, and X‐ray photoelectron spectroscopy (XPS). XRD analysis confirmed the formation of solid solution Mn1.9M0.1O3–δ (M = Co, Cu, and Ni). M‐doped samples exhibited different morphology when compared with pure Mn2O3 as evidenced by FESEM analysis, and Co‐doped Mn2O3 possessed the highest specific surface area. XPS analysis revealed the presence of multiple oxidation states of Mn (+4, +3, and +2) and Co (+2 and +3). Soot oxidation activity tests, performed using thermogravimetric analysis, showed that Mn1.9Co0.1O3–δ exhibited better catalytic performance (T50 = 390°C) when compared with pure Mn2O3 (T50 = 490°C). The incorporation of dopants greatly enhanced the oxygen vacancies and redox properties of Mn2O3.

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“…In the past decades, owing to changing valence states of Mn 4+ , Mn 3+ and Mn 2+ in the MnO x , manganese oxides exhibit excellent catalytic performance for redox reactions. Nowadays, MnO x ‐based oxides have been applied as promising active components for soot catalytic combustion . In order to enhancing the activity of MnO x , other transition metals, alkali metals or alkaline‐earth metals were composited or doped with Mn element.…”

Section: Introductionmentioning

confidence: 93%

3DOM SiO₂-Supported Different Alkali Metals-Modified MnOx Catalysts: Preparation and Catalytic Performance for Soot combustion

Wang

Zhang

et al. 2017

ChemistrySelect

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A series of novel and cheap catalysts, which contain three‐dimensionally ordered macroporous (3DOM) structure and alkali‐doped MnOx nanoparticles, were designed and prepared by a facile method. The physical and chemical properties of as‐prepared catalysts were characterized by XRD, SEM, TEM, Raman and H2‐TPR and so on. The as‐prepared catalysts exhibit excellent catalytic performance for soot combustion, which the T10, T50 and T90 are 275 oC, 323 oC and 351 oC, respectively. This activity result is comparable to or even higher than noble metal catalyst in the medium and high temperature range. The high catalytic activities of as‐prepared catalysts are attributed to marcroporous structure, nano‐effect, immobilization effect and synergistic effect. Based on the analysis results, the possible reaction mechanisms of catalysts for soot combustion, were also proposed. Due to easy synthesis, low cost, high activity, the as‐prepared catalysts are promising for practical applications, and this work also provides potential research approaches to get excellent catalysts.

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Crystal facet-dependent reactivity of α-Mn2O3 microcrystalline catalyst for soot combustion

Cited by 154 publications

References 59 publications

Novel P‐Type Wide Bandgap Manganese Oxide Quantum Dots Operating at Deep UV Range for Optoelectronic Devices

Novel P‐Type Wide Bandgap Manganese Oxide Quantum Dots Operating at Deep UV Range for Optoelectronic Devices

Enhancement of soot oxidation activity of manganese oxide (Mn₂O₃) through doping by the formation of Mn_1.9M_0.1O_3–δ (M = Co, Cu, and Ni)

3DOM SiO₂-Supported Different Alkali Metals-Modified MnOx Catalysts: Preparation and Catalytic Performance for Soot combustion

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Crystal facet-dependent reactivity of α-Mn2O3 microcrystalline catalyst for soot combustion

Cited by 154 publications

References 59 publications

Novel P‐Type Wide Bandgap Manganese Oxide Quantum Dots Operating at Deep UV Range for Optoelectronic Devices

Novel P‐Type Wide Bandgap Manganese Oxide Quantum Dots Operating at Deep UV Range for Optoelectronic Devices

Enhancement of soot oxidation activity of manganese oxide (Mn2O3) through doping by the formation of Mn1.9M0.1O3–δ (M = Co, Cu, and Ni)

3DOM SiO2-Supported Different Alkali Metals-Modified MnOx Catalysts: Preparation and Catalytic Performance for Soot combustion

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Enhancement of soot oxidation activity of manganese oxide (Mn₂O₃) through doping by the formation of Mn_1.9M_0.1O_3–δ (M = Co, Cu, and Ni)

3DOM SiO₂-Supported Different Alkali Metals-Modified MnOx Catalysts: Preparation and Catalytic Performance for Soot combustion