Crystal-Field Level Inversion in Lightly Mn-Doped<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>Sr</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:msub><mml:mi>Ru</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>7</mml:mn></mml:msub></mml:math>

Hossain, Md. Akhtar; Hu, Z.; Haverkort, M. W.; Burnus, T.; Chang, C. F.; Klein, Stefan; Denlinger, J. D.; Lin, Hong Ji; Chen, C. T.; Mathieu, Roland; Tokura, Y.; Satow, S.; Yoshida, Yoshiyuki; Takagi, H.; Tanaka, A.; Elfimov, I. S.; Sawatzky, G. A.; Tjeng, L. H.; Damascelli, A.

doi:10.1103/physrevlett.101.016404

Cited by 41 publications

(42 citation statements)

References 17 publications

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“…2H. This is consistent with previous assessment that the high temperature metal and the low temperature insulator in Sr 3 ðRu 1−x Mn x Þ 2 O 7 correspond to PM and AFM phases respectively (16,17), although the MIT occurs at much higher temperature than that of magnetic ordering.…”

Section: Resultssupporting

confidence: 80%

mentioning

confidence: 99%

“…The substitution of Ru by Mn strengthens the electron correlation via the modification of the lattice, and the system becomes a Mott insulator at low temperatures (16). According to previous work (16,17), the Mott MIT occurs with ð5 ∼ 20Þ% Mn doping (x ¼ 0.05 ∼ 0.2) in Sr 3 ðRu 1−x Mn x Þ 2 O 7 , accompanied with antiferromagnetic (AFM) ordering. Here, we cleave the layered Sr 3 ðRu 1−x Mn x Þ 2 O 7 single crystals with x ¼ 0 and 0.2 in ultrahigh vacuum (UHV) to create a fresh ab plane (see Fig.…”

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confidence: 99%

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Imaging and manipulation of the competing electronic phases near the Mott metal-insulator transition

Kim

Angst

et al. 2010

Proc. Natl. Acad. Sci. U.S.A.

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The complex interplay between the electron and lattice degrees of freedom produces multiple nearly degenerate electronic states in correlated electron materials. The competition between these degenerate electronic states largely determines the functionalities of the system, but the invoked mechanism remains in debate. By imaging phase domains with electron microscopy and interrogating individual domains in situ via electron transport spectroscopy in double-layered Sr 3 ðRu 1−x Mn x Þ 2 O 7 (x ¼ 0 and 0.2), we show in realspace that the microscopic phase competition and the Mott-type metal-insulator transition are extremely sensitive to applied mechanical stress. The revealed dynamic phase evolution with applied stress provides the first direct evidence for the important role of strain effect in both phase separation and Mott metal-insulator transition due to strong electron-lattice coupling in correlated systems.phase separation | electron microscopy | electron transport | scanning tunneling microscopy | strongly correlated materials I t is becoming increasingly clear that the exotic properties displayed by complex materials such as high-T c superconductivity in cuprates, "colossal" magnetoresistance (CMR) in manganites, and heavy-fermion behavior in f -electron compounds are intimately related to the coexistence of competing nearly degenerate states which couple with active degrees of freedom-charge, lattice, orbital, and spin states (1). The striking phenomena associated with these materials are due in large part to spatial electronic inhomogeneities that can be manifested in electronic phase fluctuations and phase separation (PS) (1-4). While electronic phase fluctuations are difficult to probe due to their dynamic nature, electronic PS and domain percolation have indeed been observed as a function of temperature and magnetic field in manganites, which have led to a breakthrough in understanding the CMR effect (5, 6). Although it has been suggested (7), the interplay between phase separations and mechanical strain has not been directly observed.Particularly, in d-electron systems where the on-site electronelectron Coulomb repulsion energy U is comparable to the tunneling electron hopping amplitude t or the bandwidth W , a Mott-type metal-insulator transition (MIT) can occur. The ground state of a Mott insulator is usually antiferromagnetic in nature, but can be modified by either charge doping (the band filling) or crystal engineering (the bandwidth control) (1). Near the Mott MIT boundary, competition between different ground states may lead to electronic PS. Various spectroscopic measurements have revealed the competing states and the associated electronic inhomogeneities (8-10), however, the interplay between bandwidth control and electronic PS near the Mott MIT is still unresolved (1,11,12).The correlated electron material studied here is Mn-doped Sr 3 ðRu 1−x Mn x Þ 2 O 7 , which belongs to the Ruddlesden-Popper series with a stacking of two layers of corner-sharing RuO 6 octahedra separated by cation ox...

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Section: Resultssupporting

confidence: 80%

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confidence: 99%

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confidence: 99%

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Imaging and manipulation of the competing electronic phases near the Mott metal-insulator transition

Kim

Angst

et al. 2010

Proc. Natl. Acad. Sci. U.S.A.

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“…Is band filling also changed? According to XAS data, Mn acts as 3+ in Sr 3 (Ru 0.9 Mn 0.1 ) 2 O 7 [13]. If this were the case, one would expect (1) expansion of the lattice unit cell as Mn 3+ (0.65Å) has large ionic radius than Ru 4+ (0.62Å), (2) effective S ∼2 for high spin (HS) state or S =1 for intermediate spin (IS) state, (3) Ru would exhibit 5+ valence, or (4) oxygen deficiency while Ru remains 4+.…”

Section: Single Crystals Of Srmentioning

confidence: 99%

“…X-ray absorption spectroscopy (XAS) indicated that the Mn dopant has an oxidation state different from Ru 4+ [13], while x-ray photoemission spectroscopy (XPS) showed no sign of dopinginduced multiple Ru valences up to x =0.2 [14]. We have studied Sr 3 (Ru 1−x Mn x ) 2 O 7 over an extended doping range with 0≤x ≤0.7.…”

mentioning

confidence: 93%

Structure-property coupling in Sr3(Ru1−xMnx)
Hu
¹
,
McCandless
²
,
Garlea
³

et al. 2011
Phys. Rev. B
32
1
42
0
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In Situ Observations and Tuning of Physical and Chemical Phenomena on the Surfaces of Strongly Correlated Oxides

Gai¹,

Kalinin²,

Li³

et al. 2013

Adv Funct Materials

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The characteristic aspect of strongly correlated oxides systems is the strong coupling between the structural, electronic and magnetic properties. A small change in one property can produce a large change in another. Controllable surface tuning provides the opportunity to study how structural, electronic, and magnetic properties respond to the broken symmetry and opens avenues for exploration of completely new physical properties. The extreme sensitivity of properties to external chemical and physical stimuli makes in situ characterization a requirement for controlled tuning of complex correlated materials. This paper reviews some recent progress in in situ observations and tuning of physical and chemical phenomena on the surfaces of strongly correlated oxides thin fi lms and crystals, including atomic-level structural studies, control, and tuning of the physical properties. FEATURE ARTICLEchemistry at different temperature are discussed; also mentioned is the direct observation of doped holes and their correlation to the magnetic and transport behaviors of manganites. Controllable surface tuning is demonstrated through chemical environment or local or global stresses. Water, oxygen and external strain are shown to defi ne both structure and properties of oxide interfaces and can be employed as a means to control static and dynamic distributions of electrons and atoms.www.afm-journal.de www.MaterialsViews.com wileyonlinelibrary.com

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Crystal-Field Level Inversion in Lightly Mn-DopedSr3Ru2O7

Cited by 41 publications

References 17 publications

Imaging and manipulation of the competing electronic phases near the Mott metal-insulator transition

Imaging and manipulation of the competing electronic phases near the Mott metal-insulator transition

Structure-property coupling in Sr3(Ru1−xMnx)
Hu
¹
,
McCandless
²
,
Garlea
³

et al. 2011
Phys. Rev. B
32
1
42
0
View full text Add to dashboard Cite

In Situ Observations and Tuning of Physical and Chemical Phenomena on the Surfaces of Strongly Correlated Oxides

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Crystal-Field Level Inversion in Lightly Mn-DopedSr3Ru2O7

Cited by 41 publications

References 17 publications

Imaging and manipulation of the competing electronic phases near the Mott metal-insulator transition

Imaging and manipulation of the competing electronic phases near the Mott metal-insulator transition

Structure-property coupling in Sr3(Ru1−xMnx)Hu1, McCandless2, Garlea3 et al. 2011Phys. Rev. B321420View full textAdd to dashboardCite

In Situ Observations and Tuning of Physical and Chemical Phenomena on the Surfaces of Strongly Correlated Oxides

Contact Info

Product

Resources

About

Structure-property coupling in Sr3(Ru1−xMnx)
Hu
¹
,
McCandless
²
,
Garlea
³

et al. 2011
Phys. Rev. B
32
1
42
0
View full text Add to dashboard Cite