Crystal Growth and Electric Properties of Bismuth Titanate Fibers

The development of a surface micromachined infrared ray (IR) focal plane array (FPA), in which a single SiO 2 layer functions as an IR absorbing plate and a Pb(Zr 0.3 Ti 0.7 )O 3 thin film serves as a thermally sensitive material is described. The advantages of using SiO 2 as an IR absorbing layer include the fact that it has good IR absorbance within the 8-12 µm spectral range. In this case, about 60% of the incident IR spectrum in this range was absorbed. Another important advantage of SiO 2 , when applied to the top of the Pt/PZT/Pt stack, is that it functions as a supporting membrane. Consequently, the IR absorbing layer forms as one body on the membrane structure, which simplifies the overall MEMS process and provides a robust structure.

Section: Introductionmentioning

confidence: 99%

High-Performance Ferroelectric Bi₄Ti₃O₁₂ Single Crystals Grown by Top-Seeded Solution Growth Method under High-Pressure Oxygen Atmosphere

Kitanaka

Noguchi

Miyayama

2010

“…2) The piezoelectric properties of PZT-based ceramics near the MPB region have widely been characterized because their enhancement appears in MPB; [1][2][3] however, the toxicity of Pb leads to health and environmental problems. Thus, various lead-free piezoelectric ceramics such as alkaline niobatebased ceramics; [4][5][6] Bi-layered structure ceramics, 7,8) BaTiO 3based ceramics, [9][10][11] and bismuth sodium titanate-based ceramics [12][13][14] have been extensively investigated as alternative lead-free systems.…”

Section: Introductionmentioning

confidence: 99%

Synthesis and piezoelectric properties of (1 −x)Bi_0.5(Na_0.8K_0.2)_0.5TiO₃–xSr₂ZrTiO₆ceramics

Onishi

Ogawa

Iida

et al. 2017

The effects of Sr2ZrTiO6 (SZT) addition on the piezoelectric properties of (1 − x)Bi0.5(Na0.8K0.2)0.5TiO3 (BNKT)–xSZT ceramics were characterized in this study. The X-ray powder diffraction (XRPD) profiles and Raman spectra of the ceramics in the composition range of 0–0.02 implies the presence of morphotropic phase boundary (MPB) which consists of the rhombohedral and tetragonal phases. Moreover, the temperature dependence of dielectric loss indicated a presence of the ferroelectric–relaxor transition temperature (TF–R) of around 75 °C for x = 0.005 and the temperature dependence shifted to a lower temperature at x = 0.01. The temperature dependence of the P–E hysteresis loop of the ceramics at the compositions of x = 0.005–0.02 showed pinched hysteresis loops above TF–R. Regarding the piezoelectric constant (d33), it was increased by SZT addition in the MPB region (x = 0–0.01) and the highest d33 of 202 pC/N was obtained at the composition of x = 0.0025. The S–E unipolar loop was also evaluated, the strain of the ceramic increased up to x = 0.02; and the highest pm/V was obtained at the composition of x = 0.02.

“…[20][21][22][23][24] In addition, BiT crystals obtained by conventional methods, such as flux methods, are thin plates with a thickness of less than 0.2 mm because of a low crystal-growth rate along the c-axis. [25][26][27] The poor performance with low P r and the difficulty in growing thick crystals make the investigation of electrical properties of BiT difficult.…”

Section: Introductionmentioning

confidence: 99%

Elastic and Piezoelectric Properties of High-Quality Ferroelectric Bi₄Ti₃O₁₂ Single Crystals

Kitanaka

Noguchi

Miyayama

et al. 2012

Piezoelectric properties of ferroelectric Bi4Ti3O12 (BiT) single crystals have been investigated by a resonance–antiresonance method. Large and high-quality single crystals of BiT were obtained via top-seeded solution growth under a high oxygen pressure of 0.9 MPa. The elastic and piezoelectric constants in the (11), (12), (13), and (26) modes for BiT single crystals have been determined for the first time. It is shown that BiT has a large d 26 constant of 79 pC/N and a large k 26 factor of 40%, indicating that BiT is a promising ferroelectric material for application to shear-mode piezoelectric devices.