Crystal Growth and Ferroelectric Properties of BaTiO3 Thin Films Deposited on Si Substrate by Low Energy Ion Beam Assisted Deposition Technique

Abstract

BaTi0 3 thin films were deposited on silicon substrates by ionizing oxygen gas in evaporating Ti metals and BaC0 3 compounds. BaTi0 3 films were deposited after very thin films of TiN were deposited on Si substrates to prevent the oxidation of Si surfaces. The deposited BaTi0 3 thin films had tetragonal (t-) polycrystals oriented to the ( 101) crystalline plane. A BaTi0 3 film deposited using oxygen ion beams with an energy of 100 e V and a current of 0.16 mA/cm 2 had a large saturated polarization value of 39 1-1C/cm 2 and a polarization-electric field (P-E) hysteresis loop with a remanent polarization of 7.3 1-1C/cm 2 and a coercive field of 102.9 kV/cm. Their remanent polarization values decreased when the energies of oxygen ion beams were increased and decreased from 100 eV.